Author

Helmut Jorke

Observed names: H Jorke, H. J. Jorke, H. JORKE, H. Jorke, H.J. Jorke

Observed institutions: AT&T (United States), Forschungszentrum Jülich, Universität Ulm, Allgemeine Elektrizitäts Gesellschaft (Germany), Technical University of Munich, Daimler (Germany)

OpenAlex ID: A5016429487

Strain-Induced Two-Dimensional Electron Gas in Selectively Doped Si/SixGe1−x Superlattices

1985 · G. Abstreiter, H. Brugger, et al. · Physical Review Letters · 496

The n-channel SiGe/Si modulation-doped field-effect transistor

1986 · H. Daembkes, H.-J. Herzog, et al. · IEEE Transactions on Electron Devices · 194

Surface segregation of Sb on Si(100) during molecular beam epitaxy growth

1988 · H. Jorke · Surface Science · 156

Symmetrically strained Si/Ge superlattices on Si substrates

1988 · E. Kasper, H. Kibbel, et al. · Physical review. B, Condensed matter · 145

Secondary implantation of Sb into Si molecular beam epitaxy layers

1985 · H. Jorke, H.-J. Herzog, et al. · Applied Physics Letters · 111

Kinetics of ordered growth of Si on Si(100) at low temperatures

1989 · H. Jorke, H.-J. Herzog, et al. · Physical review. B, Condensed matter · 94

Strained layer superlattices

1987 · E. Kasper, H.-J. Herzog, et al. · Superlattices and Microstructures · 83

Folded acoustic phonons in Si- Six Ge1−x superlattices

1986 · H. Brugger, G. Abstreiter, et al. · Physical review. B, Condensed matter · 78

Boron delta doping in Si and Si0.8Ge0.2 layers

1990 · H. Jorke, H. Kibbel · Applied Physics Letters · 60

Doping by Secondary Implantation

1986 · H. Jorke, H. Kibbel · Journal of The Electrochemical Society · 56

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Forward-bias characteristics of Si bipolar junctions grown by molecular beam epitaxy at low temperatures

1993 · H. Jorke, H. Kibbel, et al. · Applied Physics Letters · 37

Properties of Si layers grown by molecular beam epitaxy at very low temperatures

1989 · H. Jorke, H. Kibbel, et al. · Applied Physics Letters · 37

Comparison of carrier profiles from spreading resistance analysis and from model calculations for abrupt doping structures

1987 · A. Casel, H. Jorke · Applied Physics Letters · 36

Mobility Enhancement in Modulation‐Doped Si ‐ Si1 − x Ge x Superlattice Grown by Molecular Beam Epitaxy

1986 · H. Jorke, H. ‐J. Herzog · Journal of The Electrochemical Society · 35

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Strain measurements and thermal stability of Si1−xGex/Si strained layers

1989 · B. Holländer, S. Mantl, et al. · Journal of materials research/Pratt's guide to venture capital sources · 33

Dispersion of folded phonons in superlattices

1986 · H. Brugger, H. Reiner, et al. · Superlattices and Microstructures · 28

Coplanar Ka-band SiGe-MMIC amplifier

1995 · K.M. Strohm, J.-F. Luy, et al. · Electronics Letters · 25

Dependence of hole transport on Ga doping in Si molecular beam epitaxy layers

1986 · A. Casel, H. Jorke, et al. · Applied Physics Letters · 25

Si/SiGe heterostructure mitatt diode

1988 · J.F. Luy, H. Jorke, et al. · Electronics Letters · 24

Low temperature kinetics of Si(100) MBE growth

1989 · H. Jorke, H. Kibbel, et al. · Thin Solid Films · 23

Molecular-beam epitaxy of strained silicon germanium/silicon structures

1992 · E. Kasper, H. Jorke · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 21

Two-dimensional electron systems in Si/SixGe1−x strained-layer superlattices

1986 · G. Abstreiter, H. Brugger, et al. · Surface Science · 21

Thermal annealing of modulation-doped Si/SiGe heterostructures with high electron mobilities

1991 · F. Schäffler, H. Jorke · Applied Physics Letters · 19

Strain Adjustment in Si / SiGe Superlattices by a SiGe Alloy Buffer Layer

1989 · H. ‐J. Herzog, H. Jorke, et al. · Journal of The Electrochemical Society · 17

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Ion implantation in Si/Si1−xGex epitaxial layers and superlattices

1989 · S. Mantl, B. Holländer, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 17

Works count: 69

Citation count: 2,053

H-index: 21

I10-index: 30