Author

Kazukuni Hara

Observed name: K. Hara

Institutions: Hamamatsu Photonics (Japan), Mirise Technologies Corporation (Japan)

Observed institutions: Hamamatsu Photonics (Japan), Showa Denko (Japan), Denso (Japan), Toyota Central Research and Development Laboratories (Japan), Mirise Technologies Corporation (Japan), Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya University, National Institute of Advanced Industrial Science and Technology

ORCID: 0000-0001-6380-2893

Observed ORCID: 0000-0001-6380-2893

OpenAlex ID: A5017113563

Vital Issues for SiC Power Devices

1998 · Kazukuni Hara · Materials science forum · 52

Development of a 150 mm 4H-SiC epitaxial reactor with high-speed wafer rotation

2013 · Hiroaki Fujibayashi, Masahiko Ito, et al. · Applied Physics Express · 33

Detection of edge component of threading dislocations in GaN by Raman spectroscopy

2018 · Nobuhiko Kokubo, Yosuke Tsunooka, et al. · Applied Physics Express · 30

Stable and high-speed SiC bulk growth without dendrites by the HTCVD method

2016 · Yuichiro Tokuda, Emi Makino, et al. · Journal of Crystal Growth · 20

Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth

2016 · Hideyuki Uehigashi, Keisuke Fukada, et al. · Materials science forum · 19

Current-Voltage and Capacitance-Voltage Characteristics of Metal/Oxide/6H-Silicon Carbide Structure

1995 · Norihito Tokura, Kazukuni Hara, et al. · Japanese Journal of Applied Physics · 18

Impact of SiC Structural Defects on the Degradation Phenomenon of Bipolar SiC Devices

2003 · Rajesh Kumar Malhan, Hiroki Nakamura, et al. · Materials science forum · 13

Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction

2016 · Hidekazu Tsuchida, Isaho Kamata, et al. · Materials science forum · 12

4H-SiC Bulk Growth Using High-Temperature Gas Source Method

2014 · Yuichiro Tokuda, Jun Kojima, et al. · Materials science forum · 9

Self-Healing Phenomenon of Micropipes in Silicon Carbide

2002 · Atsuto Okamoto, Yoshiki Seno, et al. · Materials science forum · 8

Mechanism of nitrogen incorporation in sublimation growth of SiC

2002 · Masami Naitoh, Kazukuni Hara, et al. · Journal of Crystal Growth · 8

150mm Silicon Carbide Selective Embedded Epitaxial Growth Technology by CVD

2017 · Kazukuni Hara, Hiroaki Fujibayashi, et al. · Materials science forum · 7

GaN epitaxial growth on 4 degree off-axis Si- and C-face 4H-SiC without buffer layers by tri-halide vapor-phase epitaxy with high-speed wafer rotation

2019 · Kazukuni Hara, Shigeyuki Takaki, et al. · Japanese Journal of Applied Physics · 6

Demonstration of recycling process for GaN substrates using laser slicing technique towards cost reduction of GaN vertical power MOSFETs

2024 · Takashi Ishida, Takashi Ushijima, et al. · Applied Physics Express · 4

Fast 4H-SiC Epitaxial Growth on 150 mm Diameter Area with High-Speed Wafer Rotation

2014 · Hiroaki Fujibayashi, Masahiko Ito, et al. · Materials science forum · 3

Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm Substrates

2014 · Masahiko Ito, Hiroaki Fujibayashi, et al. · Materials science forum · 3

On-chip new current sensing technology with high accuracy using field effect resistance for intelligent power MOSFETs

2005 · N. Tokura, T. Yamamoto, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 3

Effect of H2 addition on growth rate and surface morphology of GaN(0001) grown by halide-vapor-phase epitaxy using GaCl3

2023 · Kazukuni Hara, Eizou Yamamoto, et al. · Japanese Journal of Applied Physics · 1

Suppression of cluster formation in GaN growth by tri-halide vapor phase epitaxy with external GaCl 3 gas supply system

2022 · Kazukuni Hara, Eizou Yamamoto, et al. · Japanese Journal of Applied Physics · 1

3D Raman Spectroscopy Investigation of Defects in 4H-SiC Epilayer

2015 · Kazukuni Hara, Masami Naito, et al. · Materials science forum · 1

GaN epitaxial growth on 4 degree off-axis Si- and C-face 4H-SiC without buffer layer by tri-halide vapor phase epitaxy

2019 · Kazukuni Hara · ICSCRM2019 Organizing Committee

Impact of SiC Structural Crystal Defects on the Electrical Performance of Bipolar PN Junction Diode

2002 · R. K. Malhan, H. Nakamura, et al. · International Conference on Solid State Devices and Materials (SSDM)

Silicon carbide-reinforced plastic material

1982 · H. Enomoto, Kazukuni Hara · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)

Works count: 23

Citation count: 251

H-index: 9

I10-index: 8