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Eng-Huat Toh
Observed names:
E. H. Toh,
E.-H. Toh,
E.H. Toh,
Eng-huat Toh,
Toh Eng-Huat
Institution:
GlobalFoundries (Singapore)
Observed institutions:
National University of Singapore,
GlobalFoundries (Singapore),
GlobalFoundries (Germany),
Nanjing University
ORCID:
0000-0001-9855-7859
Observed ORCID:
0000-0001-9855-7859
OpenAlex ID:
A5017144886
Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications
2008
·
Eng-Huat Toh
, Grace Huiqi Wang
, et al.
·
Journal of Applied Physics
·
198
Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization
2007
·
Eng-Huat Toh
, Grace Huiqi Wang
, et al.
·
Applied Physics Letters
·
144
Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction
2007
·
Eng-Huat Toh
, Grace Huiqi Wang
, et al.
·
Applied Physics Letters
·
105
Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source
2008
·
Eng-Huat Toh
, Grace Huiqi Wang
, et al.
·
Japanese Journal of Applied Physics
·
102
Manufacturable 22nm FD-SOI Embedded MRAM Technology for Industrial-grade MCU and IOT Applications
2019
·
V. B. Naik
, K. Lee
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
78
JEDEC-Qualified Highly Reliable 22nm FD-SOI Embedded MRAM For Low-Power Industrial-Grade, and Extended Performance Towards Automotive-Grade-1 Applications
2020
·
V. B. Naik
, K. Yamane
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
49
22-nm FD-SOI Embedded MRAM Technology for Low-Power Automotive-Grade-l MCU Applications
2018
·
K. Lee
, R. Chao
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
46
Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region
2007
·
Eng-Huat Toh
, Grace Huiqi Wang
, et al.
·
IEEE Transactions on Electron Devices
·
44
22-nm FD-SOI Embedded MRAM with Full Solder Reflow Compatibility and Enhanced Magnetic Immunity
2018
·
K. Lee
, K. Yamane
, et al.
·
Symposium on VLSI Technology
·
37
I-MOS Transistor With an Elevated Silicon–Germanium Impact-Ionization Region for Bandgap Engineering
2006
·
Eng-Huat Toh
, Grace Huiqi Wang
, et al.
·
IEEE Electron Device Letters
·
31
Performance enhancement of n-channel impact-ionization metal-oxide-semiconductor transistor by strain engineering
2007
·
Eng-Huat Toh
, Grace Huiqi Wang
, et al.
·
Applied Physics Letters
·
26
Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor
2012
·
Kain Lu Low
, Chunlei Zhan
, et al.
·
Japanese Journal of Applied Physics
·
23
PDF
A Double-Spacer I-MOS Transistor With Shallow Source Junction and Lightly Doped Drain for Reduced Operating Voltage and Enhanced Device Performance
2008
·
Eng-Huat Toh
, Grace Huiqi Wang
, et al.
·
IEEE Electron Device Letters
·
22
Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing
2007
·
Grace Huiqi Wang
, Eng-Huat Toh
, et al.
·
Applied Physics Letters
·
21
High quality silicon-germanium-on-insulator wafers fabricated using cyclical thermal oxidation and annealing
2006
·
Grace Huiqi Wang
, Eng-Huat Toh
, et al.
·
Applied Physics Letters
·
21
A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistor
2006
·
Eng-Huat Toh
, Grace Huiqi Wang
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
21
Low-power and high-sensitivity system-on-chip hall effect sensor
2017
·
Bin Liu
, Yongshun Sun
, et al.
·
Proceedings of IEEE Sensors/Proceedings of IEEE Sensors ...
·
20
Simulation and design of a germanium L-shaped impact-ionization MOS transistor
2007
·
Eng-Huat Toh
, Grace Huiqi Wang
, et al.
·
Semiconductor Science and Technology
·
19
Performance Comparison of Cross-Like Hall Plates with Different Covering Layers
2014
·
Fei Lyu
, Zhenyan Zhang
, et al.
·
Sensors
·
18
PDF
A Gradient-Gated SPAD Array for Non-Line-of-Sight Imaging
2023
·
Jiuxuan Zhao
, Francesco Gramuglia
, et al.
·
IEEE Journal of Selected Topics in Quantum Electronics
·
17
A Modular Three-Dimensional Hall Effect Sensor for Performance Optimization
2021
·
Eng-Huat Toh
, Yongshun Sun
, et al.
·
IEEE Sensors Journal
·
16
Magnetic Immunity Guideline for Embedded MRAM Reliability to Realize Mass Production
2020
·
T. Y. Lee
, K. Yamane
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
15
On the Performance Limit of Impact-Ionization Transistors
2007
·
C. Shen
, J.-Q. Lin
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
15
Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process
2024
·
Feng Liu
, Claudio Bruschini
, et al.
·
IEEE Journal of Selected Topics in Quantum Electronics
·
13
PDF
Area and pulsewidth dependence of bipolar TDDB in MgO magnetic tunnel junction
2018
·
J. H. Lim
, N. Raghavan
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
12
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Works count:
73
Citation count:
1,265
H-index:
18
I10-index:
32
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