Work

Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing

Year: 2007

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.2803853

Authors: Grace Huiqi Wang, Eng-Huat Toh, Xincai Wang, Sudhiranjan Tripathy, Thomas Osipowicz, Taw Kuei Chan, Keat-Mun Hoe, Subramaniam Balakumar, Guo-Qiang Lo, Ganesh Samudra, Yee-Chia Yeo

Institutions: National University of Singapore, Agency for Science, Technology and Research, Singapore Institute of Manufacturing Technology, Institute of Materials Research and Engineering, Institute of Microelectronics

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1978601970

FWCI: 0.595

Cites: 10

Cited by: 21

Related to: 10