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Grace Huiqi Wang

Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications
2008 · Eng-Huat Toh, Grace Huiqi Wang, et al. · Journal of Applied Physics · 198
Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization
2007 · Eng-Huat Toh, Grace Huiqi Wang, et al. · Applied Physics Letters · 144
Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction
2007 · Eng-Huat Toh, Grace Huiqi Wang, et al. · Applied Physics Letters · 105
Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source
2008 · Eng-Huat Toh, Grace Huiqi Wang, et al. · Japanese Journal of Applied Physics · 102
Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region
2007 · Eng-Huat Toh, Grace Huiqi Wang, et al. · IEEE Transactions on Electron Devices · 44
I-MOS Transistor With an Elevated Silicon–Germanium Impact-Ionization Region for Bandgap Engineering
2006 · Eng-Huat Toh, Grace Huiqi Wang, et al. · IEEE Electron Device Letters · 31
Performance enhancement of n-channel impact-ionization metal-oxide-semiconductor transistor by strain engineering
2007 · Eng-Huat Toh, Grace Huiqi Wang, et al. · Applied Physics Letters · 26
A Double-Spacer I-MOS Transistor With Shallow Source Junction and Lightly Doped Drain for Reduced Operating Voltage and Enhanced Device Performance
2008 · Eng-Huat Toh, Grace Huiqi Wang, et al. · IEEE Electron Device Letters · 22
Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing
2007 · Grace Huiqi Wang, Eng-Huat Toh, et al. · Applied Physics Letters · 21
High quality silicon-germanium-on-insulator wafers fabricated using cyclical thermal oxidation and annealing
2006 · Grace Huiqi Wang, Eng-Huat Toh, et al. · Applied Physics Letters · 21
A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistor
2006 · Eng-Huat Toh, Grace Huiqi Wang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 21
Simulation and design of a germanium L-shaped impact-ionization MOS transistor
2007 · Eng-Huat Toh, Grace Huiqi Wang, et al. · Semiconductor Science and Technology · 19
Cointegration of In Situ Doped Silicon–Carbon Source and Silicon–Carbon I-Region in P-Channel Silicon Nanowire Impact-Ionization Transistor
2008 · Eng-Huat Toh, Grace Huiqi Wang, et al. · IEEE Electron Device Letters · 11
Strained Silicon–Germanium-On-Insulator n-MOSFET With Embedded Silicon Source-and-Drain Stressors
2008 · Grace Huiqi Wang, Eng-Huat Toh, et al. · IEEE Electron Device Letters · 11
Impact Ionization Nanowire Transistor with Multiple-Gates, Silicon-Germanium Impact Ionization Region, and Sub-5 mV/decade Subtheshold Swing
2007 · Eng-Huat Toh, Grace Huiqi Wang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 11
Reduced Contact Resistance and Improved Surface Morphology of Ohmic Contacts on GaN Employing KrF Laser Irradiation
2011 · Grace Huiqi Wang, Ting-Chong Wong, et al. · Japanese Journal of Applied Physics · 10
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Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors
2007 · Eng-Huat Toh, Grace Huiqi Wang, et al. · Applied Physics Letters · 9
Silicon-Germanium-Tin (SiGeSn) Source and Drain Stressors formed by Sn Implant and Laser Annealing for Strained Silicon-Germanium Channel P-MOSFETs
2007 · Grace Huiqi Wang, Eng-Huat Toh, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 8
Strained Silicon-Germanium-on-Insulator N-MOSFETs Featuring Lattice Mismatched Source/Drain Stressor and High-Stress Silicon Nitride Liner
2006 · Grace Huiqi Wang, Eng-Huat Toh, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 6
Device Physics and Performance Optimization of Impact-Ionization Metal–Oxide–Semiconductor Transistors formed using a Double-Spacer Fabrication Process
2008 · Eng-Huat Toh, Grace Huiqi Wang, et al. · Japanese Journal of Applied Physics · 5
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A complementary-I-MOS technology featuring SiGe channel and i-region for enhancement of impact-ionization, breakdown voltage, and performance
2007 · Eng-Huat Toh, Grace Huiqi Wang, et al. · European Solid-State Device Research Conference · 4
P-Channel I-MOS Transistor featuring Silicon Nano-Wire with Multiple-Gates, Strained Si1-yCy I-region, in situ doped Si1-yCy Source, and Sub-5 mV/decade Subthreshold Swing
2008 · Eng-Huat Toh, Grace Huiqi Wang, et al. · IEEE International Power Modulator Symposium and High-Voltage Workshop (IPMHVC) · 2
Realization of Silicon-Germanium-Tin (SiGeSn) Source/Drain Stressors by Sn implant and Solid Phase Epitaxy for strain engineering in SiGe channel P-MOSFETs
2008 · Grace Huiqi Wang, Eng-Huat Toh, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 2
Strained Silicon–Germanium-on-Insulator n-Channel Transistor with Silicon Source and Drain Regions for Performance Enhancement
2007 · Grace Huiqi Wang, Eng-Huat Toh, et al. · Japanese Journal of Applied Physics · 2
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A Strained N-channel Impact-ionization MOS (I-MOS) Transistor with Elevated Silicon-Carbon Source/Drain for Performance Enhancement
2007 · Eng-Huat Toh, Grace Huiqi Wang, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 2
Works count: 40
Citation count: 840
H-index: 12
I10-index: 16
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