Work

A Strained N-channel Impact-ionization MOS (I-MOS) Transistor with Elevated Silicon-Carbon Source/Drain for Performance Enhancement

Year: 2007

Type: conference-paper

Source: International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)

DOI: 10.1109/vtsa.2007.378931

Authors: Eng-Huat Toh, Grace Huiqi Wang, Guo-Qiang Lo, Siew-Fong Choy, Lap Chan, Ganesh Samudra, Yee-Chia Yeo

Institutions: National University of Singapore, Institute of Microelectronics

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2000901632

FWCI:

Cites:

Cited by: 2

Related to: 10