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Lap Chan

Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction
2007 · Eng-Huat Toh, Grace Huiqi Wang, et al. · Applied Physics Letters · 105
Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source
2008 · Eng-Huat Toh, Grace Huiqi Wang, et al. · Japanese Journal of Applied Physics · 102
High-k gate stack on germanium substrate with fluorine incorporation
2008 · Ruilong Xie, Mingbin Yu, et al. · Applied Physics Letters · 70
Effective Schottky Barrier Height Reduction Using Sulfur or Selenium at the NiSi/n-Si (100) Interface for Low Resistance Contacts
2007 · Hoong-Shing Wong, Lap Chan, et al. · IEEE Electron Device Letters · 47
Sub-0.1-eV Effective Schottky-Barrier Height for NiSi on n-Type Si (100) Using Antimony Segregation
2007 · Hoong-Shing Wong, Lap Chan, et al. · IEEE Electron Device Letters · 46
Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region
2007 · Eng-Huat Toh, Grace Huiqi Wang, et al. · IEEE Transactions on Electron Devices · 44
Mechanism of nitrogen-enhanced negative bias temperature instability in pMOSFET
2004 · Shyue Seng Tan, Tu Pei Chen, et al. · Microelectronics Reliability · 37
Low Schottky barrier height for silicides on n-type Si (100) by interfacial selenium segregation during silicidation
2008 · Hoong-Shing Wong, Lap Chan, et al. · Applied Physics Letters · 35
I-MOS Transistor With an Elevated Silicon–Germanium Impact-Ionization Region for Bandgap Engineering
2006 · Eng-Huat Toh, Grace Huiqi Wang, et al. · IEEE Electron Device Letters · 31
Soft-Lithography-Mediated Chemical Vapor Deposition of Architectured Carbon Nanotube Networks on Elastomeric Polymer
2001 · Hou Tee Ng, Maw Lin Foo, et al. · Langmuir · 30
Performance enhancement of n-channel impact-ionization metal-oxide-semiconductor transistor by strain engineering
2007 · Eng-Huat Toh, Grace Huiqi Wang, et al. · Applied Physics Letters · 26
Room Temperature Ferromagnetism in $({\hbox {Zn}}_{1-{\rm x}},{\hbox {Mg}}_{\rm x}){\hbox {O}}$ Film
2010 · Yuwei Ma, Jun Ding, et al. · IEEE Transactions on Magnetics · 25
Understanding of Via‐Etch‐Induced Polymer Formation and Its Removal
1997 · Ying Wang, Sandra W. Graham, et al. · Journal of The Electrochemical Society · 25
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A Double-Spacer I-MOS Transistor With Shallow Source Junction and Lightly Doped Drain for Reduced Operating Voltage and Enhanced Device Performance
2008 · Eng-Huat Toh, Grace Huiqi Wang, et al. · IEEE Electron Device Letters · 22
A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistor
2006 · Eng-Huat Toh, Grace Huiqi Wang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 21
Simulation and design of a germanium L-shaped impact-ionization MOS transistor
2007 · Eng-Huat Toh, Grace Huiqi Wang, et al. · Semiconductor Science and Technology · 19
Neighboring effect in nitrogen-enhanced negative bias temperature instability
2003 · Shyue Seng Tan, Tu Pei Chen, et al. · International Conference on Solid State Devices and Materials (SSDM) · 19
Charge-induced conductance modulation of carbon nanotube field effect transistor memory devices
2009 · Mei Yin Chan, Li Wei, et al. · Carbon · 17
Cool Copper Template for the Formation of Oriented Nanocrystalline α-Tantalum
2002 · Clare Yong, Bei Chao Zhang, et al. · The Journal of Physical Chemistry B · 17
Silicon–Carbon Stressors With High Substitutional Carbon Concentration and In Situ Doping Formed in Source/Drain Extensions of n-Channel Transistors
2008 · Hoong-Shing Wong, Kah-Wee Ang, et al. · IEEE Electron Device Letters · 16
An area efficient high turn ratio monolithic transformer for silicon RFIC
2008 · Chee Chong Lim, Kiat Seng Yeo, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 15
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Current instability of carbon nanotube field effect transistors
2007 · Ning Peng, Qing Zhang, et al. · Nanotechnology · 14
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Influence of Nitrogen Proximity from the Si/SiO2 Interface on Negative Bias Temperature Instability
2002 · Shyue Seng Tan, Tu Pei Chen, et al. · Japanese Journal of Applied Physics · 13
Cointegration of In Situ Doped Silicon–Carbon Source and Silicon–Carbon I-Region in P-Channel Silicon Nanowire Impact-Ionization Transistor
2008 · Eng-Huat Toh, Grace Huiqi Wang, et al. · IEEE Electron Device Letters · 11
Defect engineering by surface chemical state in boron-doped preamorphized silicon
2007 · S. H. Yeong, M. P. Srinivasan, et al. · Applied Physics Letters · 11
Works count: 95
Citation count: 1,047
H-index: 17
I10-index: 28
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