Work

High-k gate stack on germanium substrate with fluorine incorporation

Year: 2008

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.2913048

Authors: Ruilong Xie, Mingbin Yu, Mei Ying Lai, Lap Chan, Chunxiang Zhu

Institutions: National University of Singapore, Institute of Microelectronics, Institute of Materials Research and Engineering

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2075441925

FWCI: 7.934

Cites: 20

Cited by: 70

Related to: 10