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Ruilong Xie

Directed self-assembly of block copolymers for 7 nanometre FinFET technology and beyond
2018 · Chi-Chun Liu, Elliott Franke, et al. · Nature Electronics · 141
Scaling Challenges for Advanced CMOS Devices
2017 · Ajey P. Jacob, Ruilong Xie, et al. · International Journal of High Speed Electronics and Systems · 141
Effects of Sulfur Passivation on Germanium MOS Capacitors With HfON Gate Dielectric
2007 · Ruilong Xie, Chunxiang Zhu · IEEE Electron Device Letters · 74
High-k gate stack on germanium substrate with fluorine incorporation
2008 · Ruilong Xie, Mingbin Yu, et al. · Applied Physics Letters · 70
Interface-Engineered High-Mobility High-$k$/Ge pMOSFETs With 1-nm Equivalent Oxide Thickness
2009 · Ruilong Xie, Thanh Hoa Phung, et al. · IEEE Transactions on Electron Devices · 47
Effects of fluorine incorporation and forming gas annealing on high-k gated germanium metal-oxide-semiconductor with GeO2 surface passivation
2008 · Ruilong Xie, Wei He, et al. · Applied Physics Letters · 45
High mobility high-k/Ge pMOSFETs with 1 nm EOT -New concept on interface engineering and interface characterization
2008 · Ruilong Xie, Thanh Hoa Phung, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 41
Backside Power Distribution for Nanosheet Technologies Beyond 2nm
2024 · Ruilong Xie, Wonhyuk Hong, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 26
Scaling Challenges for Advanced CMOS Devices
2017 · Ajey P. Jacob, Ruilong Xie, et al. · Selected topics in electornics and systems · 19
Effective Surface Passivation by Novel $\hbox{SiH}_{4}$ –$\hbox{NH}_{3}$ Treatment and BTI Characteristics on Interface-Engineered High-Mobility $\hbox{HfO}_{2}$-Gated Ge pMOSFETs
2010 · Ruilong Xie, Thanh Hoa Phung, et al. · IEEE Transactions on Electron Devices · 18
CMP Challenges for Advanced Technology Nodes
2017 · John H. Zhang, Haigou Huang, et al. · MRS Advances · 14
Energy distribution of interface traps in germanium metal-oxide-semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility
2008 · Ruilong Xie, Nan Wu, et al. · Applied Physics Letters · 9
Gate-Cut-Last in RMG to Enable Gate Extension Scaling and Parasitic Capacitance Reduction
2019 · Andrew Greene, Huimei Zhou, et al. · Symposium on VLSI Technology · 8
Low Temperature Metal Induced Lateral Crystallization of Ge Using Germanide Forming Metals
2009 · Thanh Hoa Phung, Ruilong Xie, et al. · Journal of The Electrochemical Society · 8
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Palladium-Induced Lateral Crystallization of Amorphous-Germanium Thin Film on Insulating Substrate
2009 · Ruilong Xie, Thanh Hoa Phung, et al. · Electrochemical and Solid-State Letters · 8
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CMP: Consideration of Stop-on Selectivity in Advanced Node Semiconductor Manufacturing Technology
2017 · Stan Tsai, Hari Amanapu, et al. · ECS Transactions · 7
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Self-Allancd Gate Contact (SAGC) for CMOS technology scaling beyond 7nm
2019 · Ruilong Xie, Chanro Park, et al. · Symposium on VLSI Technology · 6
Parasitic Resistance Reduction for Aggressively Scaled Stacked Nanosheet Transistors
2020 · Su-Chen Fan, Ruilong Xie, et al. · IEEE International Interconnect Technology Conference (IITC) · 4
Interface engineering for high-k/Ge gate stack
2008 · Ruilong Xie, Chunxiang Zhu · IEEE International Conference on Solid-State and Integrated Circuit Technology · 2
Gas cluster ion beam processing for improved self aligned contact yield at 7 nm node FinFET: MJ: MOL and junction interfaces
2018 · Su Chen Fan, Sean Teehan, et al. · ASMC proceedings · 1
Low Temperature Metal-Induced Lateral Crystallization of Si1-xGex Using Silicide/Germanide-Forming-Metals
2010 · Thanh Hoa Phung, Ruilong Xie, et al. · Japanese Journal of Applied Physics · 1
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Asymmetric Energy Distribution of Interface Traps in Germanium MOSFETs with HfO2 Gate Dielectric
2008 · Ruilong Xie, Nan Wu, et al. · ECS Transactions · 1
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Enhanced Ge MOS Device Performance Through a Novel Post-gate CF4-plasma Treatment Process
2008 · Ruilong Xie, Muruganandam Thamarai, et al. · ECS Transactions · 1
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Effects of Sulfur Passivation on Ge MOS Capacitors with High-k Gate Dielectric
2007 · Ruilong Xie, Chunxiang Zhu · International Conference on Solid State Devices and Materials (SSDM) · 1
Backside Contact Resistivity Reduction for Nanosheet Technologies Beyond 2nm by Backside Nanosecond Laser Anneal Without Impacting the Frontside Cu BEOL
2026 · Ruilong Xie, Kevin Brew, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Works count: 31
Citation count: 693
H-index: 11
I10-index: 11
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