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Ganesh Samudra

Observed names: G Samudra, G. Samudra, Ganesh C. Samudra, Ganesh G. Samudra
OpenAlex ID: A5111884010
Nonvolatile Flash Memory Device Using Ge Nanocrystals Embedded in HfAlO High- $kappa$ Tunneling and Control Oxides: Device Fabrication and Electrical Performance
2004 · J.H. Chen, Y.Q. Wang, et al. · IEEE Transactions on Electron Devices · 99
Fast and slow dynamic NBTI components in p-MOSFET with sion dielectric and their impact on device life-time and circuit application
2005 · T. Yang, M.F. Li, et al. · Symposium on VLSI Technology · 62
Tungsten nanocrystals embedded in high-k materials for memory application
2005 · S. K. Samanta, Won Jong Yoo, et al. · Applied Physics Letters · 53
Electrical Characteristics of Memory Devices With a High-$k$$\hbox{HfO}_{2}$ Trapping Layer and Dual $\hbox{SiO}_{2}/\hbox{Si}_{3}\hbox{N}_{4}$ Tunneling Layer
2007 · Ying Qian Wang, Wan Sik Hwang, et al. · IEEE Transactions on Electron Devices · 49
Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectric
2005 · T. Yang, C. Shen, et al. · IEEE Electron Device Letters · 49
Sub-0.1-eV Effective Schottky-Barrier Height for NiSi on n-Type Si (100) Using Antimony Segregation
2007 · Hoong-Shing Wong, Lap Chan, et al. · IEEE Electron Device Letters · 46
Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region
2007 · Eng-Huat Toh, Grace Huiqi Wang, et al. · IEEE Transactions on Electron Devices · 44
Advanced modeling of the effective minority carrier lifetime of passivated crystalline silicon wafers
2012 · Fa-Jun Ma, Ganesh G. Samudra, et al. · Journal of Applied Physics · 42
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Modeling Study of the Impact of Surface Roughness on Silicon and Germanium UTB MOSFETs
2005 · T. Low, M.-F. Li, et al. · IEEE Transactions on Electron Devices · 38
Band alignment between amorphous Ge2Sb2Te5 and prevalent complementary-metal-oxide-semiconductor materials
2008 · Lina Wei-Wei Fang, Ji-Sheng Pan, et al. · Applied Physics Letters · 31
I-MOS Transistor With an Elevated Silicon–Germanium Impact-Ionization Region for Bandgap Engineering
2006 · Eng-Huat Toh, Grace Huiqi Wang, et al. · IEEE Electron Device Letters · 31
Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals
2006 · S.K. Samanta, P.K. Singh, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 31
Thin body silicon-on-insulator N-MOSFET with silicon-carbon source/drain regions for performance enhancement
2006 · Kah-Wee Ang, King-Jien Chui, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 30
A Double-Spacer I-MOS Transistor With Shallow Source Junction and Lightly Doped Drain for Reduced Operating Voltage and Enhanced Device Performance
2008 · Eng-Huat Toh, Grace Huiqi Wang, et al. · IEEE Electron Device Letters · 22
A novel CMOS compatible L-shaped impact-ionization MOS (LI-MOS) transistor
2006 · Eng-Huat Toh, Grace Huiqi Wang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 21
50 nm Silicon-On-Insulator N-MOSFET Featuring Multiple Stressors: Silicon-Carbon Source/Drain Regions and Tensile Stress Silicon Nitride Liner
2006 · K.-W. Ang, K.-J. Chui, et al. · Symposium on VLSI Technology · 15
Self-assembled tungsten nanocrystals in high-k dielectric for nonvolatile memory application
2005 · S. K. Samanta, Zerlinda Y. L. Tan, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 15
Impact Ionization Nanowire Transistor with Multiple-Gates, Silicon-Germanium Impact Ionization Region, and Sub-5 mV/decade Subtheshold Swing
2007 · Eng-Huat Toh, Grace Huiqi Wang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 11
High-field electron transport for ellipsoidal multivalley band structure of silicon
1992 · Ganesh Samudra, Soo Jin Chua, et al. · Journal of Applied Physics · 10
Modeling Study of InSb Thin Film For Advanced III-V MOSFET Applications
2006 · Z. G. Zhu, Tony Low, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 9
Source/drain germanium condensation for p-channel strained ultra-thin body transistors
2006 · King-Jien Chui, Kah-Wee Ang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 9
A FinFET and Tri-gate MOSFET's channel structure patterning and its influence on the device performance
2004 · S. Jagar, Navab Singh, et al. · Thin Solid Films · 8
Graphene Nanoribbon Tunneling Field-Effect Transistors With a Semiconducting and a Semimetallic Heterojunction Channel
2012 · Haixia Da, Kai-Tak Lam, et al. · IEEE Transactions on Electron Devices · 7
Pseudo-potential band structure calculation of InSb ultra-thin films and its application to assess the n-metal-oxide-semiconductor transistor performance
2008 · Zhen Gang Zhu, Tony Low, et al. · Semiconductor Science and Technology · 7
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Source and Drain Series Resistance Reduction for N-Channel Transistors Using Solid Antimony (Sb) Segregation (SSbS) During Silicidation
2008 · Hoong-Shing Wong, Alvin Tian-Yi Koh, et al. · IEEE Electron Device Letters · 5
Works count: 51
Citation count: 765
H-index: 15
I10-index: 19
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