Work

Modeling Study of the Impact of Surface Roughness on Silicon and Germanium UTB MOSFETs

Year: 2005

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2005.857188

Authors: T. Low, M.-F. Li, G. Samudra, Y.-C. Yeo, C. Zhu, A. Chin, D.-L. Kwong

Institutions: National University of Singapore, Fudan University, Purdue University West Lafayette, University of California, Berkeley, Hong Kong University of Science and Technology, National Yang Ming Chiao Tung University, University of Michigan, University of Notre Dame, Agency for Science, Technology and Research, National Tsing Hua University, The University of Texas at Austin

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2005808040

FWCI: 2.459

Cites: 32

Cited by: 38

Related to: 10