Work

Graphene Nanoribbon Tunneling Field-Effect Transistors With a Semiconducting and a Semimetallic Heterojunction Channel

Year: 2012

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2012.2186577

Authors: Haixia Da, Kai-Tak Lam, G. Samudra, Sai-Kong Chin, Gengchiau Liang

Institutions: National University of Singapore, Agency for Science, Technology and Research, Institute of High Performance Computing

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2113608302

FWCI: 0.4

Cites: 51

Cited by: 7

Related to: 10