Electrical Characteristics of Memory Devices With a High-$k$$\hbox{HfO}_{2}$ Trapping Layer and Dual $\hbox{SiO}_{2}/\hbox{Si}_{3}\hbox{N}_{4}$ Tunneling Layer
Year: 2007
Type: article
Authors: Ying Qian Wang, Wan Sik Hwang, Gang Zhang, G. Samudra, Yee-Chia Yeo, Won Jong Yoo
Institutions: National University of Singapore, Sungkyunkwan University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1983009794