Author

Julien Gatineau

Observed name: J. Gatineau

Institution: Air Liquide Laboratories (Japan)

Observed institutions: Seoul National University, Air Liquide (France), Air Liquide Laboratories (Japan)

OpenAlex ID: A5017540731

Atomic Layer Deposition of SrTiO3 Thin Films with Highly Enhanced Growth Rate for Ultrahigh Density Capacitors

2011 · Sang Woon Lee, Jeong Hwan Han, et al. · Chemistry of Materials · 143

Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode

2011 · Jeong Hwan Han, Sora Han, et al. · Applied Physics Letters · 84

Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO4 Precursor

2008 · Jeong Hwan Han, Sang Woon Lee, et al. · Chemistry of Materials · 66

Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor

2010 · Jae-Min Kim, Han-Bo-Ram Lee, et al. · Japanese Journal of Applied Physics · 59

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Atomic Layer Deposition of Ruthenium Using the Novel Precursor bis(2,6,6-trimethyl-cyclohexadienyl)ruthenium

2011 · Keith Gregorczyk, Laurent Henn-Lecordier, et al. · Chemistry of Materials · 57

Electronic Structure of Cerium Oxide Gate Dielectric Grown by Plasma-Enhanced Atomic Layer Deposition

2011 · Woo-Hee Kim, W. J. Maeng, et al. · Journal of The Electrochemical Society · 51

Growth of RuO2 Thin Films by Pulsed-Chemical Vapor Deposition Using RuO4 Precursor and 5% H2 Reduction Gas

2010 · Jeong Hwan Han, Sang Woon Lee, et al. · Chemistry of Materials · 50

Substrate Dependent Growth Behaviors of Plasma-Enhanced Atomic Layer Deposited Nickel Oxide Films for Resistive Switching Application

2012 · Seul Ji Song, Sang Woon Lee, et al. · Chemistry of Materials · 43

A new RuO4 solvent solution for pure ruthenium film depositions

2006 · Julien Gatineau, Kazutaka Yanagita, et al. · Microelectronic Engineering · 40

Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition

2011 · Woo-Hee Kim, Min-Kyu Kim, et al. · Journal of The Electrochemical Society · 36

Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor

2013 · Jusang Park, Han-Bo-Ram Lee, et al. · Journal of Energy Chemistry · 31

Growth of Conductive SrRuO3 Films by Combining Atomic Layer Deposited SrO and Chemical Vapor Deposited RuO2 Layers

2012 · Jeong Hwan Han, Woongkyu Lee, et al. · Chemistry of Materials · 31

Study on Initial Growth Behavior of RuO2 Film Grown by Pulsed Chemical Vapor Deposition: Effects of Substrate and Reactant Feeding Time

2012 · Jeong Hwan Han, Sang Woon Lee, et al. · Chemistry of Materials · 24

Growth characteristics and properties of indium oxide and indium-doped zinc oxide by atomic layer deposition

2015 · Donghyun Kim, Taewook Nam, et al. · Thin Solid Films · 22

Atomic layer deposition of tantalum nitride based thin films from cyclopentadienyl type precursor

2010 · A. Correia Anacleto, A. Zauner, et al. · Thin Solid Films · 13

Pulsed-Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Thin Films using RuO4 Precursor for the DRAM Capacitor Electrode

2009 · Jeong Hwan Han, Sang Woon Lee, et al. · ECS Transactions · 3

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Deposition of highly pure ruthenium thin films with a new metal-organic precursor

2007 · Julien Gatineau, Christian Dussarrat · Surface and Coatings Technology · 3

Synthesis and PEALD evaluation of new Nickel precursors

2014 · Satoko Gatineau, Changhee Ko, et al. · IEEE International Interconnect Technology Conference (IITC) · 1

Nanosession: Atomic Layer Deposition

2012 · Cheol Seong Hwang, Woongkyu Lee, et al. · Frontiers in Electronic Materials

Development of New Alkylgermyl Telluride Molecules and their Use for Room Temperature GST Depositions

2011 · Hana Ishii, Jiro Yokota, et al. · ECS Meeting Abstracts

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A Combined Experimental with Computational Study of Precursor Stability and ALD Growth Mechanism in Tantalum Nitride Deposition

2010 · Pluton Pullumbi, Anthony Correia Anacleto, et al. · ECS Meeting Abstracts

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Pulsed-Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Thin Films using RuO4 Precursor for the DRAM Capacitor Electrode

2009 · Jeong Hwan Han, Sang Woon Lee, et al. · ECS Meeting Abstracts

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ChemInform Abstract: Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO4 Precursor.

2009 · Jeong Hwan Han, Sang Woon Lee, et al. · ChemInform

Ruthenium Precursor with Increased Reactivity

2008 · Sandrine Pic, Julien Gatineau · ECS Meeting Abstracts

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A New Liquid Precursor for Pure Ruthenium Depositions

2007 · Julien Gatineau, Christian Dussarrat · ECS Transactions

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Works count: 27

Citation count: 757

H-index: 14

I10-index: 15