Author

Klaus Mause

Observed names: K. Mause, Mause, K., Mause, Klaus

Institution: Deutsche Bundespost

Observed institutions: Deutsche Bundespost, Deutsche Telekom (Germany)

OpenAlex ID: A5017961544

Gunn device gigabit rate digital microcircuits

1975 · K. Mause, A. Schlachetzki, et al. · IEEE Journal of Solid-State Circuits · 30

Nonalloyed ohmic contacts for p + -type InGaAs base layer in HBTs

1992 · P. Ressel, K. Vogel, et al. · Electronics Letters · 20

Measurements of the influence of the nd product on the Gunn effect

1972 · Andreas Schlachetzki, Klaus Mause · Electronics Letters · 13

Simple integrated circuit with Gunn devices

1972 · K. Mause · Electronics Letters · 10

Shift register with Gunn devices for multiplexing techniques in the gigabit- per-second range

1976 · K. Mause, E. Hesse, et al. · IEE Journal on SolidState and Electron Devices · 8

Electron diffusion length in InGaAs:Zn derived from heterostructure bipolar transistors

1995 · E. Kuphal, K. Mause, et al. · Solid-State Electronics · 6

1.3 µm monolithic integrated optoelectronicreceiver using anInGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

1995 · V. Hurm, W. Benz, et al. · Electronics Letters · 6

Shallow Ohmic Contacts to p-InGaAs Based on Pd/Ge with Implanted Zn or Cd

1993 · P. Ressel, H. Strusny, et al. · MRS Proceedings · 6

Fully self-aligned N-p-n InGaAs/InP HBTs with evaluation of their microwave characteristics

1992 · G. Pitz, H.L. Hartnagel, et al. · Solid-State Electronics · 6

Multiplexing and Demultiplexing Techniques with Gunn Devices in the Gigabit-Per-Second Range

1976 · K. Mause · IEEE Transactions on Microwave Theory and Techniques · 6

Delay structures with planar Gunn devices

1975 · K. Mause · Electronics Letters · 6

MOVPE growth for an integrated PIN-HBT receiver using Zn-doped p+-InGaAs layers

1997 · A. Eisenbach, A. Goldhorn, et al. · Journal of Crystal Growth · 4

Ohmic contacts on p-In0.53Ga0.47As prepared by Zn implantation into Pd-based metallizations

1995 · P. Ressel, H. Strusny, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 3

InP based HBTs-technology, performance and applications

2003 · F. Fiedler, K. Mause, et al. · IEEE/LEOS Summer Topical Meetings · 2

Multiplexing- and Demultiplexing-Techniques with Gunn Devices in the Gbit/s Range

2005 · K. Mause · IEEE MTT-S International Microwave Symposium digest · 1

1.3 /spl mu/m monolithic integrated optoelectronic receiver using InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

1994 · V. Hurm, W. Benz, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 1

Circuit Integration of GaAs Gunn Devices

1974 · K. Mause, A. Schlachetzki, et al. · IEEE Transactions on Communications · 1

Zn-implanted Pd-based ohmic contacts to p-In/sub 0.53/Ga/sub 0.47/As for the base layer of InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors

2002 · P. Ressel, H. Strusny, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials

Electron-hole recombination in GaAlAs DH lasers

1978 · H. Burkhard, K. Mause · Solid-State Electronics

Shift register in the sub-ns range - An example of circuit integration with Gunn devices

1976 · K. Mause, A. Schlachetzki, et al.

Planar gunn devices with cathode tip.

1976 · K. Kurumada, K. Mause

Limits of a Digital Circuit Integration with Gunn Devices on Galliumarsenide

1973 · Andreas Schlachetzki, Klaus Mause · European Microwave Conference (EuMC)

Works count: 25

Citation count: 129

H-index: 6

I10-index: 4