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A. Sattu

Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes
2008 · R. Jain, W. Sun, et al. · Applied Physics Letters · 98
Large Chip High Power Deep Ultraviolet Light-Emitting Diodes
2010 · Max Shatalov, Wenhong Sun, et al. · Applied Physics Express · 46
Device self‐heating effects in deep UV LEDs studied by systematic variation in pulsed current injection
2008 · Meredith L. Reed, Michael Wraback, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 15
AlGaN/GaN Microwave Switch With Hybrid Slow and Fast Gate Design
2010 · A. Sattu, J. Yang, et al. · IEEE Electron Device Letters · 12
Small- and Large-Signal Performance of III-Nitride RF Switches With Hybrid Fast/Slow Gate Design
2011 · Ajay Kumar Sattu, Jinwei Yang, et al. · IEEE Microwave and Wireless Components Letters · 8
Non‐catalyst growth and characterization of a ‐plane AlGaN nanorods
2006 · Mikhail E. Gaevski, Wenhong Sun, et al. · physica status solidi (a) · 7
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Low-loss AlInN/GaN microwave switch
2011 · A. Sattu, D. Billingsley, et al. · Electronics Letters · 6
Novel Approaches to Microwave Switching Devices Using Nitride Technology
2011 · G. SIMIN, J. WANG, et al. · International Journal of High Speed Electronics and Systems · 6
Degradation mechanisms beyond device self-heating in deep ultraviolet light emitting diodes
2009 · Craig G. Moe, Meredith L. Reed, et al. · IEEE International Reliability Physics Symposium proceedings · 3
Low loss AlInN/GaN Monolithic Microwave Integrated Circuit switch
2011 · A. Sattu, D. Billingsley, et al. · Conference digest · 2
Enhanced Power and Breakdown in III-N RF Switches With a Slow Gate
2011 · A. Sattu, J. Deng, et al. · IEEE Electron Device Letters · 2
Power Packaging Trends in Emerging 48V Ecosystem
2024 · Ajay Sattu · IMAPSource Proceedings
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Novel Approaches to Microwave Switching Devices Using Nitride Technology
2013 · G. SIMIN, J. WANG, et al. · Frontiers in Electronics
AlGaN/GaN HFET with composite 'slow/fast' gate
2011 · A. Sattu · Scholar Commons (University of South Carolina)
Traveling-wave microwave switch using III-N gateless devices with capacitively-coupled contacts
2009 · Jingbo Wang, Bilal Khan, et al. · International Semiconductor Device Research Symposium
Characterization of InGaN structures grown by epitaxial lateral overgrowth over a-plane GaN template
2006 · S. Miasojedovas, Saulius Juršėnas, et al. · Prace Naukowe Uniwersytetu Ekonomicznego we Wrocławiu
Works count: 16
Citation count: 205
H-index: 6
I10-index: 4
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