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B. Damilano

Observed names: B Damilano, B. DAMILANO, B. Damilano (d, Benjamin Damilano, Benjamin Damilano,, D Almquist Benjamin, DAMILANO, Benjamin, Damilano B, Damilano Benjamin, Damilano, B., Damilano, Benjamin
Observed institutions: Soitec (France), Ben-Gurion University of the Negev, Centre National de la Recherche Scientifique, Université de Montpellier, Université Côte d'Azur, Purdue University West Lafayette, NTT (Japan), Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Institut d'Astrophysique de Paris, CEA Grenoble, Columbia Region Healthcare Engineers Association, Institute of High Pressure Physics, NTT Basic Research Laboratories, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Laboratoire Charles Coulomb, Laboratoire d'Électronique des Technologies de l'Information, Université Montpellier 2, Communauté d'universités et d'établissements Université Côte d'Azur, Ruhr University Bochum, Polish Academy of Sciences
ORCID: 0000-0001-7127-4461
Observed ORCID: 0000-0001-7127-4461
OpenAlex ID: A5018806726
Metasurface orbital angular momentum holography
2019 · Haoran Ren, Gauthier Briere, et al. · Nature Communications · 639
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From visible to white light emission by GaN quantum dots on Si(111) substrate
1999 · B. Damilano, N. Grandjean, et al. · Applied Physics Letters · 303
Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
1999 · N. Grandjean, B. Damilano, et al. · Journal of Applied Physics · 281
Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces
2020 · Qinghua Song, Arthur Baroni, et al. · Nature Communications · 259
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High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
2001 · P. Lefebvre, A. Morel, et al. · Applied Physics Letters · 230
Molecular Beam Epitaxy of Group-III Nitrides on Silicon Substrates: Growth, Properties and Device Applications
2001 · F. Semond, Y. Cordier, et al. · physica status solidi (a) · 170
Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy
2013 · Stéphane Brochen, Julien Brault, et al. · Applied Physics Letters · 152
Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells
2001 · Benjamin Damilano, Nicolas Grandjean, et al. · Japanese Journal of Applied Physics · 131
Radiative lifetime of a single electron-hole pair in GaN∕AlN quantum dots
2006 · T. Bretagnon, P. Lefebvre, et al. · Physical Review B · 129
Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth
1999 · B. Damilano, N. Grandjean, et al. · Applied Physics Letters · 121
Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces
2021 · Qinghua Song, Arthur Baroni, et al. · Nature Communications · 114
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Yellow–red emission from (Ga,In)N heterostructures
2015 · B Damilano, B Gil · Journal of Physics D Applied Physics · 111
Atomic structure of pyramidal defects in Mg-doped GaN
2003 · P. Vennéguès, M. Leroux, et al. · Physical review. B, Condensed matter · 97
Full InGaN red light emitting diodes
2020 · A. Dussaigne, F. Barbier, et al. · Journal of Applied Physics · 90
Bandwidth-unlimited polarization-maintaining metasurfaces
2021 · Q. Song, S. Khadir, et al. · Science Advances · 84
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Group-III nitride quantum heterostructures grown by molecular beam epitaxy
2001 · Nicolas Grandjean, Benjamin Damilano, et al. · Journal of Physics Condensed Matter · 78
InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K
2000 · B. Damilano, N. Grandjean, et al. · Applied Physics Letters · 78
Influence of pressure on the optical properties of InxGa1−xN epilayers and quantum structures
2001 · P. Perlin, I. Gorczyca, et al. · Physical review. B, Condensed matter · 74
Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
2003 · V. Potin, E. Hahn, et al. · Journal of Crystal Growth · 71
In surface segregation in InGaN/GaN quantum wells
2003 · A. Dussaigne, B. Damilano, et al. · Journal of Crystal Growth · 70
Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes
2002 · S. Kalliakos, X. B. Zhang, et al. · Applied Physics Letters · 70
Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes
2001 · P. Lefebvre, T. Taliercio, et al. · Applied Physics Letters · 64
Excitons in nitride heterostructures: From zero- to one-dimensional behavior
2013 · D. Rosales, T. Bretagnon, et al. · Physical Review B · 61
Role of magnetic polarons in ferromagnetic GdN
2013 · F. Natali, B. J. Ruck, et al. · Physical Review B · 61
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GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment
1999 · F. Semond, B. Damilano, et al. · Applied Physics Letters · 61
Works count: 375
Citation count: 7,208
H-index: 44
I10-index: 148
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