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C. Dubon‐Chevallier

Observed names: C Dubon-Chevalier, C Dubon-Chevallier, C. DUBON-CHEVALLIER, C. DUBON‐CHEVALLIER, C. Dubon, C. Dubon-Chevalher, C. Dubon-Chevalier, C. Dubon-Chevall, C. Dubon-Chevallier, C. Dubon-chevallier, Chantal Dubon, DUBON, CHANTAL, Dubon-Chevallier, C.
Institution: Orange (France)
OpenAlex ID: A5019528450
Observation of Bloch conduction perpendicular to interfaces in a superlattice bipolar transistor
1986 · J. F. Palmier, C. Minot, et al. · Applied Physics Letters · 48
Comprehensive study of AuMn p-type ohmic contact for GaAs/GaAlAs heterojunction bipolar transistors
1986 · C. Dubon-Chevallier, M. Gauneau, et al. · Journal of Applied Physics · 34
Heavily doped GaAs(Be)/GaAlAs HBTs grown by MBE with high device performances and high thermal stability
1992 · N. Jourdan, F. Alexandre, et al. · IEEE Transactions on Electron Devices · 33
Heavily doped base GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy
1990 · F. Alexandre, J.L. Benchimol, et al. · Electronics Letters · 33
Ga0.72Al0.28As/Ga0.99Be0.01As heterojunction bipolar transistor grown by molecular beam epitaxy
1986 · J.L. Lievin, C. Dubon-Chevall, et al. · IEEE Electron Device Letters · 33
Very high gain in carbon-doped base heterojunction bipolar transistor grown by chemical beam epitaxy
1992 · J.L. Benchimol, F. Alexandre, et al. · Electronics Letters · 31
Excess noise in AlGaAs/GaAs heterojunction bipolar transistors and associated TLM test structures
1994 · C. Delseny, F. Pascal, et al. · IEEE Transactions on Electron Devices · 27
Analysis of d.c. characteristics of GaAlAsGaAs double heterojunction bipolar transistors
1986 · D. Ankri, R. Azoulay, et al. · Solid-State Electronics · 27
Be diffusion mechanisms in InGaAs during post-growth annealing
1995 · S. Koumetz, J. Marcon, et al. · Applied Physics Letters · 25
Verification of on-wafer noise parameter measurements
1995 · A. Boudiaf, C. Dubon-Chevallier, et al. · IEEE Transactions on Instrumentation and Measurement · 21
Electrical characterisation of the p-type dopant diffusion of highly doped AlGaAs/GaAs heterojunction bipolar transistors grown by MOCVD
1990 · J. Dangla, C. Dubon-Chevallier, et al. · Electronics Letters · 17
Innovative passivated heterojunction bipolar transistor grown by CBE
1992 · C. Dubon-Chevallier, F. Alexandre, et al. · Electronics Letters · 15
Modern epitaxial techniques for HBT structures
1995 · F Alexandre, J.L Benchimol, et al. · Solid-State Electronics · 14
Anodic bonding of gallium arsenide to glass
1983 · Bertil Hök, Chantal Dubon, et al. · Applied Physics Letters · 14
High doping level by rapid thermal annealing of Mg-implanted GaAs/GaAlAs for heterojunction bipolar transistors
1987 · K. Daoud-Ketata, C. Dubon-Chevallier, et al. · IEEE Electron Device Letters · 12
Reproducible low-resistivity AuMn ohmic contact for p -type GaAs
1985 · C. Dubon-Chevallier, A.M. Duchenois, et al. · Electronics Letters · 12
Oxygen complexes in III-V compounds as determined by secondary-ion mass spectrometry under cesium bombardment
1989 · M. Gauneau, R. Chaplain, et al. · Journal of Applied Physics · 11
Carbon doping of GaAs for heterojunction bipolar transistors: a comparison between MBE and CBE
1993 · J.L. Benchimol, F. Alexandre, et al. · Journal of Crystal Growth · 8
Interactions between implanted Mg and base p-type dopant (Be,Zn,C) in heterojunction bipolar transistor devices
1992 · V. Amarger, C. Dubon-Chevallier, et al. · Journal of Applied Physics · 7
Perpendicular transport in superlattice bipolar transistors (SBT)
1987 · A. Sibille, J.F. Palmier, et al. · Superlattices and Microstructures · 7
Double heterojunction GaAs-GaAlAs bipolar transistors grown by MOCVD for emitter coupled logic circuits
1983 · C. Dubon, R. Azoulay, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 7
Thermally stable low resistance ohmic contacts to n-type gallium arsenide: Magnetron cathodic sputter-deposited NiInW contacts
1991 · M. C. Hugon, B. Agius, et al. · Applied Physics Letters · 6
GeMoW Refractory Ohmic Contact for GaAs / GaAlAs Self‐Aligned Heterojunction Bipolar Transistors
1990 · C. Dubon‐Chevallier, P. Blanconnier, et al. · Journal of The Electrochemical Society · 6
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Molybdenum germanide ohmic contact to n -GaAs
1987 · K. Daoud-Ketata, C. Dubon-Chevallier, et al. · Electronics Letters · 6
GaAs/GaAlAs Heterojunction Bipolar Phototransistor for Monolithic Photoreceiver Operating at 140 Mbit/s
1986 · H. Wang, C. Bacot, et al. · IEEE Transactions on Microwave Theory and Techniques · 6
Works count: 63
Citation count: 528
H-index: 14
I10-index: 17
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