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Sanford Chu

Towards Unification of MOS Compact Models with the Unified Regional Approach
2006 · Subhash Rustagi, Liang-Choo Hsia, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology · 13
Unified Regional Charge-based Versus Surface-potential-based Compact Modeling Approaches
2005 · Xing Zhou, Siau Ben Chiah, et al. · TechConnect Briefs · 13
Predictive Simulation of Advanced Nano-CMOS Devices Based on kMC Process Simulation
2007 · K.R.C. Mok, B.. Colombeau, et al. · IEEE Transactions on Electron Devices · 9
Source–Drain Symmetry in Unified Regional MOSFET Model
2004 · S.B. Chiah, X. Zhou, et al. · IEEE Electron Device Letters · 9
A new approach to evaluation of hot-carrier lifetime of ring oscillator (RO)
2002 · Jiong Zhang, S.-F.S. Chu · IEEE Transactions on Electron Devices · 8
Unified Approach to Bulk/SOI/UTB/s-DG MOSFET Compact Modeling
2006 · Xing Zhou, K. Chandrasekaran, et al. · TechConnect Briefs · 7
Unified Regional Charge-based MOSFET Model Calibration
2005 · Guan Huei See, Siau Ben Chiah, et al. · TechConnect Briefs · 7
An Accurate and Scalable Differential Inductor Design Kit
2004 · C. B. Sial, K. W. Chanl, et al. · 7
Predictive Simulations and Optimization of Advanced Ultra-Shallow Junction formation for Nano-CMOS devices
2007 · B. Colombeau, K.R.C. Mok, et al. · International Workshop on Junction Technology · 5
Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs
2004 · Xing Zhou, Siau Ben Chiah, et al. · TechConnect Briefs · 5
Understanding the materials, electrical and reliability impact of Al-addition to ZrO2 for BEOL compatible MIM capacitors
2014 · Dina H. Triyoso, Sanford Chu, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 4
Scalable MOSFET Short-channel Charge Model for All Regions
2006 · Guan Huei See, Siau Ben Chiah, et al. · TechConnect Briefs · 4
A scaleable metal-insulator-metal capacitors process for 0.35 to 0.18 μm analog and RFCMOS
2002 · Kai Shao, Sanford Chu, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology · 4
Tunnel DCIV diagnosis of ultrathin gate oxide metal-oxide-silicon transistors
2004 · Bin B Jie, K F Lo, et al. · Semiconductor Science and Technology · 3
Reliability comparison of pure ZrO2 and Al− doped ZrO2 MIM capacitors
2013 · K. Seidel, W. Weinreich, et al. · IEEE International Integrated Reliability Workshop final report · 2
One-iteration Parameter Extraction for Length/width-dependent Threshold Voltage and Unified Drain Current Model
2005 · Siau Ben Chiah, Xing Zhou, et al. · TechConnect Briefs · 2
Threshold-Voltage-Based Regional Modeling of MOSFETs with Symmetry and Continuity
2004 · Siau Ben Chiah, Xing Zhou, et al. · 2
High Performance Device Design through Parasitic Junction Capacitance Reduction and Junction Leakage Current Suppression beyond 0.1 µm Technology
2003 · Hyun Sik Kim, Shiang Yang Ong, et al. · Japanese Journal of Applied Physics · 2
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Material development of SIMOX with a thin box
2002 · D.K. Sadana, H.J. Hovel, et al. · IEEE International SOI Conference (SOI) · 2
Simox Material Development for Sub-0.25µm Cmos Technology
1993 · D.K. Sadana, H.J. Hovel, et al. · MRS Proceedings · 2
Non-destructive characterization techniques for SOI substrates
2002 · H. Hovel, J. Freeouf, et al. · IEEE International SOI Conference (SOI) · 1
Design and Optimization of Novel High Responsivity, Wideband Silicon Photodiode
2001 · Toe Naing Swe, Kiat Seng Yeo, et al. · Japanese Journal of Applied Physics · 1
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A Carbon Co-implantation Technique for Formation of Steep Halo for nFET Short Channel Effect improvement and Performance Boost
2008 · Chung Foong Tan, Jae Gon Lee, et al. · IEEE International Power Modulator Symposium and High-Voltage Workshop (IPMHVC)
Coupling Advanced Atomistic Process and Device Modeling for Optimizing Future CMOS Devices
2006 · B. Colombeau, S.h. Yeong, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
Design and Optimization of nanoCMOS devices using predictive atomistic physics-based process modeling
2006 · B. Colombeau, K.R.C. Mok, et al. · Technical digest - International Electron Devices Meeting/Technical digest
Works count: 28
Citation count: 112
H-index: 7
I10-index: 2
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