Author

Satoru Kijima

Observed names: KIJIMA, SATORU, S. Kijima, 喜嶋悟, 悟喜島, 悟喜嶋

Observed institutions: Sony (Taiwan), University of Burdwan, Universidade Federal de Pernambuco, Sony (Japan), Tokyo University of Agriculture and Technology

OpenAlex ID: A5019750858

Significant progress in II-VI blue-green laser diodelifetime

1998 · E. Kato, H. Noguchi, et al. · Electronics Letters · 182

Kinetic model for degradation of light-emitting diodes

1997 · Shun-Lien Chuang, A. Ishibashi, et al. · IEEE Journal of Quantum Electronics · 121

GaN-Based High Power Blue-Violet Laser Diodes

2001 · Tsuyoshi Tojyo, Takeharu Asano, et al. · Japanese Journal of Applied Physics · 84

Dependence of crystallographic tilt and defect distribution on mask material in epitaxial lateral overgrown GaN layers

2000 · S. Tomiya, K. Funato, et al. · Applied Physics Letters · 55

GaN-based blue laser diodes

2001 · Takao Miyajima, Tsuyoshi Tojyo, et al. · Journal of Physics Condensed Matter · 45

PDF

High-Power AlGaInN Laser Diodes with High Kink Level and Low Relative Intensity Noise

2002 · Tsuyoshi Tojyo, Shiro Uchida, et al. · Japanese Journal of Applied Physics · 39

PDF

Universal curves for optical power degradation of II–VI light-emitting diodes

1996 · S. L. Chuang, M. Ukita, et al. · Applied Physics Letters · 39

Dislocations in GaN-Based Laser Diodes on Epitaxial Lateral Overgrown GaN Layers

2001 · S. Tomiya, H. Nakajima, et al. · physica status solidi (a) · 35

AlGaInN high-power lasers grown on an ELO-GaN layer

2000 · Motonobu Takeya, Katsunori Yanashima, et al. · Journal of Crystal Growth · 26

Optimized ZnSe:N/ZnTe:N contact structure of ZnSe-based II–VI laser diodes

1998 · Satoru Kijima, Hiroyuki Okuyama, et al. · Applied Physics Letters · 22

High-Efficiency ZnCdSe/ZnSSe/ZnMgSSe Green Light-Emitting Diodes

1995 · Norikazu Nakayama, Satoru Kijima, et al. · Optical Review · 14

Estimation of Device Properties in AlGaInN-Based Laser Diodes by Time-Resolved Photoluminescence

2001 · T. Hino, T. Asano, et al. · physica status solidi (a) · 13

AlGaInN-based laser diodes

2000 · Shiro Uchida, Satoru Kijima, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 13

Defects in ZnSe/ZnTe multiple quantum well-based pseudo-ohmic contacts to p-ZnSe

1999 · S. Tomiya, S. Kijima, et al. · Journal of Applied Physics · 8

Novel Techniques for Stabilizing Transverse Mode in AlGaInN-Based Laser Diodes

2001 · S. Kijima, T. Tojyo, et al. · physica status solidi (a) · 7

II-VI laser diode with low operating voltage andlong device lifetime

1998 · Y. Sanaka, H. Okuyama, et al. · Electronics Letters · 7

Interface Properties between Ni and p-GaN Studied by Photoemission Spectroscopy

2002 · Yoshinori Hagio, Hideo Sugahara, et al. · Japanese Journal of Applied Physics · 6

PDF

GaN-based high-power laser diodes

2001 · Takao Miyajima, Hiroshi Yoshida, et al. · Materials Science and Engineering B · 6

Effects of Annealing on the Interface Properties between Ni and p-GaN

2001 · T. Maruyama, Y. Hagio, et al. · physica status solidi (a) · 5

Study of the growth mechanism of ZnCdSe by MBE using the mass spectrometer

1998 · Hiroyuki Okuyama, Satoru Kijima, et al. · Journal of Crystal Growth · 5

400-nm Band AlGaInN-Based High Power Laser Diodes

2001 · Takeharu Asano, Motonobu Takeya, et al. · MRS Proceedings · 4

Characterization of I-III-VI2 bulk crystals grown by chemical vapor deposition: application of phase-shift-difference spectroscopy

1991 · K. Sato, Y. Kudo, et al. · Journal of Crystal Growth · 4

AlGaInN high power lasers

2001 · T. Tojyo, S. Kijima, et al. · Conference on Lasers and Electro-Optics · 3

Dislocations in GaN-Based Laser Diodes on Epitaxial Lateral Overgrown GaN Layers

2001 · S. Tomiya, H. Nakajima, et al. · physica status solidi (a) · 2

Spectra of magnetic circular dichroism of absorption and luminescence of Eu-doped CaS single crystals

1993 · Satoru Kijima, Katsuaki Sato, et al. · Journal of Luminescence · 2

Works count: 34

Citation count: 747

H-index: 13

I10-index: 13