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Besar Asllani
Observed names:
Asllani, Besar,
B. Asllani
Institution:
Supergrid Institute
Observed institutions:
Lyon 1 Université,
École Centrale de Lyon,
Centre National de la Recherche Scientifique,
University of Nottingham,
Université de Lyon,
Laboratoire Ampère,
Supergrid Institute,
Institut National des Sciences Appliquées de Lyon
show all 8
ORCID:
0000-0002-3226-2051
Observed ORCID:
0000-0002-3226-2051
OpenAlex ID:
A5019934511
Avalanche ruggedness of parallel SiC power MOSFETs
2018
·
A. Fayyaz
, B. Asllani
, et al.
·
Microelectronics Reliability
·
29
VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate
2019
·
Besar Asllani
, Alberto Castellazzi
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
21
PDF
Extraction of the 4H-SiC/SiO 2 Barrier Height Over Temperature
2019
·
O. Avino-Salvado
, B. Asllani
, et al.
·
IEEE Transactions on Electron Devices
·
20
PDF
10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization
2019
·
Besar Asllani
, Hervé Morel
, et al.
·
Energies
·
17
PDF
SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation
2018
·
Besar Asllani
, Herve Morel
, et al.
·
IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC)
·
15
Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes
2023
·
P. Vigneshwara Raja
, Christophe Raynaud
, et al.
·
Journal of Materials Science Materials in Electronics
·
14
PDF
V subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs
2018
·
Besar Asllani
, Asad Fayyaz
, et al.
·
Microelectronics Reliability
·
10
Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors
2019
·
Dominique Planson
, Besar Asllani
, et al.
·
Materials Science in Semiconductor Processing
·
9
PDF
Advanced Electrical Characterisation of High Voltage 4H-SiC PiN Diodes
2019
·
Besar Asllani
, Dominique Planson
, et al.
·
Materials science forum
·
8
Interest of Using a Micro-Meter Spatial Resolution to Study SiC Semi-Conductor Devices by Optical Beam Induced Current (OBIC)
2020
·
Camille Sonneville
, Dominique Planson
, et al.
·
Materials science forum
·
6
4H-SiC PiN Diode Protected by Narrow Field Rings Investigated by the Micro-OBIC Method
2022
·
Dominique Planson
, Camille Sonneville
, et al.
·
Materials science forum
·
5
PDF
Experimental Investigation of a 10 kV-70A Switch with Six SiC-MOSFETs in a Series-Connection Configuration
2022
·
Cédric Mathieu de Vienne
, Pierre Lefranc
, et al.
·
Materials science forum
·
5
PDF
Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range
2016
·
Besar Asllani
, Maxime Berthou
, et al.
·
Materials science forum
·
5
Active voltage balancing by turn‐off delays regulation for multiple series‐connected SiC MOSFETs
2025
·
Cédric Mathieu de Vienne
, Pierre Lefranc
, et al.
·
IET Power Electronics
·
4
PDF
Model parameter extraction tool for the analysis of seriesconnected SiC-MOSFETs
2021
·
Mathieu de Vienne, Cédric
, Lefranc, Pierre
, et al.
·
HAL
·
4
Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor
2020
·
Besar Asllani
, Herve Morel
, et al.
·
European Conference on Power Electronics and Applications
·
3
PDF
Subthreshold Drain Current Hysteresis of Planar SiC MOSFETs
2019
·
Besar Asllani
, Alberto Castellazzi
, et al.
·
Materials science forum
·
3
PDF
Cryogenic to High Temperature Exploration of 4H-SiC W-SBD
2015
·
Maxime Berthou
, Besar Asllani
, et al.
·
Materials science forum
·
3
PDF
Comparison of 2-Level and Quasi-2-Level Topologies in a Bidirectional Isolated DC-DC Converter for MVDC Networks
2025
·
José Andrés Aguilar Croston
, Jean-Yves Gauthier
, et al.
·
Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition
·
2
PDF
Towards a Common Mode Current Free Packaging Solution for High Voltage Series Connected SiC MOSFET Switches
2023
·
Mathieu de Vienne, Cédric
, Asllani, Besar
, et al.
·
HAL
·
2
PDF
Experimental study of the reduction and removal of turn-on snubber for IGCT based MMC submodule using fast silicon diodes
2022
·
Boutry, Arthur
, Buttay, Cyril
, et al.
·
HAL
·
2
PDF
Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons
2020
·
Besar Asllani
, Pascal Bevilacqua
, et al.
·
Materials science forum
·
2
Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode
2018
·
Dominique Planson
, Besar Asllani
, et al.
·
Materials science forum
·
2
PDF
Al‐Acceptor Incomplete Ionization Effects on Static and Reverse Recovery Characteristics of 4H‐SiC PiN Power Diodes
2026
·
Shikha Kumari
, Besar Asllani
, et al.
·
physica status solidi (a)
·
1
Experimental Demonstration of an IGCT/SiC PiN Diode Switching Cell Operating Without Any Turn-On Snubber
2025
·
Arthur Boutry
, Cyril Buttay
, et al.
·
IEEE Transactions on Power Electronics
·
1
PDF
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Works count:
51
Citation count:
196
H-index:
8
I10-index:
7
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