VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate
Year: 2019
Type: conference-paper
Abstract: This paper contributes to investigations on the threshold-voltage (VTH) hysteresis in SiC power MOSFETs. Such effect is of relevance mainly for sub-threshold operation of the devices, but needs to be told apart from stress-related VTH- drift phenomena for technology maturity and reliability validation goals. Important differences exist in commercially available devices, particularly in relation to their gate technology, planar or trench, the latter also showing a marked temperature dependence of the hysteretic range. Based on the experimental characterization of the interface capacitance and charge, this paper puts forward a methodology for determining the types of traps affecting the various devices, with the aim of contributing a tool to assist driving of technological maturity in future generation devices. This paper also shows the potential of capacitance hysteresis measurement to the estimation of the distribution of interface.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2945872178