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Youssef Hamdaoui

Observed names: Hamdaoui, Y. (Youssef), Hamdaoui, Youssef, Y., Hamdaoui, Youssef HAMDAOUI, Youssef, H. (Hamdaoui)
ORCID: 0009-0000-1707-0273
Observed ORCID: 0009-0000-1707-0273
OpenAlex ID: A5019965096
Demonstration of avalanche capability in 800 V vertical GaN-on-silicon diodes
2023 · Youssef Hamdaoui, Idriss Abid, et al. · Applied Physics Express · 19
1200-V Fully Vertical GaN-on-Silicon p-i-n Diodes With Avalanche Capability and High On-State Current Above 10 A
2024 · Youssef Hamdaoui, Sondre Michler, et al. · IEEE Transactions on Electron Devices · 16
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Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices
2024 · Youssef HAMDAOUI, Sofie Vandenbroucke, et al. · Micromachines · 8
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Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors
2022 · Idriss Abid, Youssef Hamdaoui, et al. · Micromachines · 6
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Epitaxy of >7 μm Thick GaN Drift Layers on 150 mm Si(111) Substrates Realizing Vertical PN Diodes with 1200 V Breakdown Voltage
2024 · Sondre Michler, Youssef Hamdaoui, et al. · physica status solidi (a) · 3
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Local substrate removal for next generation GaN-on-Silicon power transistors
2022 · Hamdaoui, Y. (Youssef), Abid, I. (Idriss), et al. · LillOA (Université de Lille (University Of Lille)) · 1
SmartGaN: First Smart Cut-Based Engineered Substrate for High-Performance GaN Power Devices
2026 · Hamdaoui, Youssef, Ben-Hammou, Lyes, et al. · HAL
Higher breakdown Better thermal management Lower defect density
2026 · Jacquet, Baptiste, Hamdaoui, Youssef, et al. · HAL
[Best poster award] Optimization of fully vertical GaN-on-silicon MOSFET for high-power energy conversion
2025 · Bidaud, Adrien, Hamdaoui, Youssef, et al. · HAL
Development of novel GaN-on-Silicon Vertical power devices
2024 · Youssef Hamdaoui · theses.fr (ABES)
High performance fully vertical GaN on Silicon PIN diodes for next generation power devices
2024 · Hamdaoui, Youssef, Michler, Sondre, et al. · HAL
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High quality fully versus pseudo vertical GaN-on-Silicon pn diodes
2024 · Hamdaoui, Youssef, Abid, Idriss, et al. · HAL
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Local substrate removal enabling next generation fully vertical GaN-on-Si power devices
2024 · Y., Hamdaoui, S., Michler, et al. · HAL
Dislocation density reduction for vertical GaN devices on 200 mm Si
2023 · Gao, Ziyao, Hamdaoui, Youssef, et al. · HAL
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Process optimization of Fully Vertical GaN-on-Silicon PIN diodes
2023 · Abid, Idriss, Hamdaoui, Youssef, et al. · HAL
Towards High Performance Fully Vertical GaN-on-Silicon PIN Diodes
2023 · Hamdaoui, Youssef, Abid, Idriss, et al. · HAL
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High quality drift layer thickness scaling in vertical GaN-on-Silicon PIN diodes
2023 · Hamdaoui, Youssef, Abid, Idriss, et al. · HAL
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[Invited] Local substrate removal for next generation GaN-on-Silicon power transistors
2022 · Hamdaoui, Youssef, Abid, Idriss, et al. · HAL
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High Breakdown Field and Low Trapping Effects up to 1400 V in Normally Off GaN‐on‐Silicon Heterostructures
2022 · Abid, Idriss, Hamdaoui, Youssef, et al. · HAL
Works count: 20
Citation count: 53
H-index: 4
I10-index: 2
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