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J. Rihani
Observed name:
Jaouher Rihani
Institutions:
Tunis University,
Tunis El Manar University
Observed institutions:
Tunis University,
Research and Technology Center of Energy,
Tunis El Manar University
OpenAlex ID:
A5020477331
Interdot carrier's transfer via tunneling pathway studied from photoluminescence spectroscopy
2008
·
J. Rihani
, V. Sallet
, et al.
·
Journal of Luminescence
·
16
Spectroscopic ellipsometry analysis of GaAs1−xNx layers grown by molecular beam epitaxy
2007
·
N. Ben Sedrine
, J. Rihani
, et al.
·
Materials Science and Engineering C
·
10
Observation of many-body Coulomb interaction effects on the photoluminescence spectra of InAs/GaAs quantum dots
2007
·
J. Rihani
, N.B. Sedrine
, et al.
·
Applied Surface Science
·
10
Competition between strain and confinement effects on the crystalline quality of InAs/GaAs (001) quantum dots probed by Raman spectroscopy
2012
·
K. Rezgui
, S. Aloulou
, et al.
·
Journal of Raman Spectroscopy
·
9
Deep Defects Annihilation in GaAs1-xNx Layers by Si-doping
2007
·
N. Ben Sedrine
, A. Hamdouni
, et al.
·
American Journal of Applied Sciences
·
6
Spectroscopic Ellipsometry Analysis of Rapid Thermal Annealing Effect on MBE Grown GaAs1−x−Nx
2009
·
Nebiha Ben Sedrine
, Jaouher Rihani
, et al.
·
Journal of Telecommunications and Information Technology
·
3
PDF
Abnormal optical behaviour of InAsSb quantum dots grown on GaAs substrate by molecular beam epitaxy
2007
·
J. Rihani
, N. Ben Sedrine
, et al.
·
Materials Science and Engineering C
Antimony incorporation in InAs quantum dots grown on GaAs substrate by molecular beam epitaxy
2007
·
J. Rihani
, V. Sallet
, et al.
·
Physica E Low-dimensional Systems and Nanostructures
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Works count:
8
Citation count:
54
H-index:
5
I10-index:
3
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