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Hareesh Chandrasekar

Observed name: Chandrasekar, Hareesh
ORCID: 0000-0001-7881-3739
Observed ORCID: 0000-0001-7881-3739
OpenAlex ID: A5020749371
Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field
2019 · Zhanbo Xia, Hareesh Chandrasekar, et al. · Applied Physics Letters · 133
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“Kink” in AlGaN/GaN-HEMTs: Floating Buffer Model
2018 · Manikant Singh, Michael J. Uren, et al. · IEEE Transactions on Electron Devices · 52
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Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates
2018 · Hareesh Chandrasekar, Michael J. Uren, et al. · IEEE Electron Device Letters · 44
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Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces
2017 · Hareesh Chandrasekar, K. N. Bhat, et al. · Scientific Reports · 41
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Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates
2020 · Hareesh Chandrasekar, Towhidur Razzak, et al. · Advanced Electronic Materials · 33
Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology
2019 · Hareesh Chandrasekar, Michael J. Uren, et al. · IEEE Transactions on Electron Devices · 32
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BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm
2020 · Towhidur Razzak, Hareesh Chandrasekar, et al. · Applied Physics Letters · 29
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Substrate Effects in GaN-on-Silicon RF Device Technology
2019 · Hareesh Chandrasekar · International Journal of High Speed Electronics and Systems · 28
An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si
2013 · Hareesh Chandrasekar, Nagaboopathy Mohan, et al. · Applied Physics Letters · 27
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Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High‐Performance Multilayer MoS2 FETs
2016 · Shubhadeep Bhattacharjee, Kolla Lakshmi Ganapathi, et al. · Advanced Electronic Materials · 25
Hybrid BaTiO3/SiNx/AlGaN/GaN lateral Schottky barrier diodes with low turn-on and high breakdown performance
2021 · Mohammad Wahidur Rahman, Hareesh Chandrasekar, et al. · Applied Physics Letters · 23
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First Observations on the Trap-Induced Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs
2019 · Bhawani Shankar, Ankit Soni, et al. · IEEE Transactions on Electron Devices · 21
Growth stress induced tunability of dielectric permittivity in thin films
2016 · K. V. L. V. Narayanachari, Hareesh Chandrasekar, et al. · Journal of Applied Physics · 21
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Dielectric Engineering of HfO 2 Gate-Stacks for Normally-ON GaN HEMTs on 200-mm Silicon Substrates
2018 · Hareesh Chandrasekar, Sandeep Kumar, et al. · IEEE Transactions on Electron Devices · 20
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Impact of thinning the GaN buffer and interface layer on thermal and electrical performance in GaN-on-diamond electronic devices
2019 · Callum Middleton, Hareesh Chandrasekar, et al. · Applied Physics Express · 17
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Re-engineering transition layers in AlGaN/GaN HEMT on Si for high voltage applications
2021 · Nayana Remesh, Hareesh Chandrasekar, et al. · Journal of Applied Physics · 16
Low voltage drop tunnel junctions grown monolithically by MOCVD
2021 · Zane Jamal-Eddine, Syed M. N. Hasan, et al. · Applied Physics Letters · 15
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Fully transparent GaN homojunction tunnel junction-enabled cascaded blue LEDs
2020 · Zane Jamal-Eddine, Syed M. N. Hasan, et al. · Applied Physics Letters · 15
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Nanoscale etching of perovskite oxides for field effect transistor applications
2019 · Junao Cheng, Hao Yang, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 15
The role of surface roughness on dislocation bending and stress evolution in low mobility AlGaN films during growth
2018 · Abheek Bardhan, Nagaboopathy Mohan, et al. · Journal of Applied Physics · 15
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Trap assisted avalanche instability and safe operating area concerns in AlGaN/GaN HEMTs
2017 · Bhawani Shankar, Ankit Soni, et al. · IEEE International Reliability Physics Symposium proceedings · 15
Compensation Dopant-Free GaN-on-Si HEMTs With a Polarization Engineered Buffer for RF Applications
2023 · Aniruddhan Gowrisankar, Vanjari Sai Charan, et al. · IEEE Transactions on Electron Devices · 13
Study of TaN-Gated p-GaN E-Mode HEMT
2023 · Rijo Baby, K. Reshma, et al. · IEEE Transactions on Electron Devices · 13
Study of the impact of interface traps associated with SiN X passivation on AlGaN/GaN MIS-HEMTs
2022 · Rijo Baby, Anirudh Venugopalrao, et al. · Semiconductor Science and Technology · 13
Estimation of background carrier concentration in fully depleted GaN films
2015 · Hareesh Chandrasekar, Manikant Singh, et al. · Semiconductor Science and Technology · 13
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Works count: 53
Citation count: 794
H-index: 16
I10-index: 30
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