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Hidemoto Tomita

Observed name: H. Tomita
ORCID: 0000-0002-5209-9298
Observed ORCID: 0000-0002-5209-9298
OpenAlex ID: A5020956164
A hp22 nm node low operating power (LOP) technology with sub-10 nm gate length planar bulk CMOS devices
2004 · N. Yasutake, K. Ohuchi, et al. · Symposium on VLSI Technology · 35
Wide-voltage SOI-BiCDMOS technology for high-temperature automotive applications
2011 · Hidemoto Tomita, Hiroomi Eguchi, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 34
Enhanced field-effect mobility (>250 cm2/V·s) in GaN MOSFETs with deposited gate oxides via mist CVD
2024 · Kazuki Ikeyama, Hidemoto Tomita, et al. · Applied Physics Express · 15
Dependence of the interfacial atomic structure of SiO 2 /GaN upon SiO 2 deposition methods and post-deposition annealing, as revealed by X-ray absorption spectroscopy
2021 · Noritake Isomura, Narumasa Soejima, et al. · Japanese Journal of Applied Physics · 4
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Breaking the Trade-off between On-Resistance and Short-Circuit Withstand Time in 1.2 kV - 500 A SiC MOSFETs Using a Narrow Fin Channel
2025 · H. Fujioka, T. Kumazawa, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 1
Visualization of local strain in 4H-SiC trench metal-oxide-semiconductor field-effect transistor using synchrotron nanobeam X-ray diffraction
2022 · Wakana Takeuchi, Eiji Kagoshima, et al. · Japanese Journal of Applied Physics · 1
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X-ray photoelectron spectroscopy insights on interfaces between SiO 2 films and GaN substrates: differences due to depositional technique
2020 · Noritake Isomura, Narumasa Soejima, et al. · Japanese Journal of Applied Physics · 1
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A hp22 nm Node Low Operating Power(LOP) Technology with Sub-10nm Gate Length Planar Bulk CMOS Devices
2004 · Nobuaki Yasutake, K. Ohuchi, et al. · Technical report of IEICE. SDM · 1
Impacts of Mechanical Uniaxial Stress on Mobility Enhancement of 4H-SiC Trench MOSFET
2024 · Momoko Inayoshi, Naotoshi Hikosaka, et al. · International Conference on Solid State Devices and Materials (SSDM)
Characterization of Local Strain in 4H-SiC Trench MOSFET by Synchrotron Nanobeam X-ray Diffraction
2021 · Wakana Takeuchi, Eiji Kagoshima, et al. · International Conference on Solid State Devices and Materials (SSDM)
GaN MOSFET characteristics of the controlled interface for vertical power devices
2021 · Hidemoto Tomita, Sayaka Harada, et al. · The Japan Society of Applied Physics
Evaluation of GaN-MOSFET with different gate oxide deposition methods
2020 · Satoshi Ikeda, Takashi Okawa, et al. · The Japan Society of Applied Physics
DLTS and MCTS study of n-GaN Schottky diodes fabricated after removal of gate oxide
2020 · Sayaka Harada, Kazuya Tamura, et al. · The Japan Society of Applied Physics
CV, DLTS of SiO 2 /p-GaN MOS fabricated on high-temperature annealed p-GaN
2019 · Hikaru Yoshida, Wakana Takeuchi, et al. · The Japan Society of Applied Physics
DLTS studies of interface states for SiO 2 /n-GaN deposited by different methods
2019 · Kazuya Tamura, Yutaka Tokuda, et al. · The Japan Society of Applied Physics
Evaluation of Interface State Distributions in LP-CVD SiO 2 /GaN by Deep-Level
2017 · Hiroyuki Ueda, Tomohiko Mori, et al. · The Japan Society of Applied Physics
An SOI based integrated gate-drivers for automotive application
2014 · Ken Toshiyuki, Yoshihiko Hiya, et al. · IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
Works count: 17
Citation count: 92
H-index: 4
I10-index: 3
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