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Dmitrii V. Andreev

Observed names: D V Andreev, D. V. Andreev, D.V. Andreev, Dmitrii Andreev
Observed institutions: Austral University of Chile, Technion – Israel Institute of Technology, Bauman Moscow State Technical University, IMEC, Samsung Semiconductor (United States), KU Leuven
ORCID: 0000-0001-9080-1028
Observed ORCID: 0000-0001-9080-1028
OpenAlex ID: A5022057946
Intrinsic electron traps in atomic-layer deposited HfO2 insulators
2016 · F. Cerbu, O. Madia, et al. · Applied Physics Letters · 63
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Use of High-Field Electron Injection into Dielectrics to Enhance Functional Capabilities of Radiation MOS Sensors
2020 · Dmitrii V. Andreev, Gennady G. Bondarenko, et al. · Sensors · 31
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Modified Ramped Current Stress Technique for Monitoring Thin Dielectrics Reliability and Charge Degradation
2022 · Dmitrii V. Andreev, Vladimir M. Maslovsky, et al. · physica status solidi (a) · 17
Method of stress and measurement modes for research of thin dielectric films of MIS structures
2016 · Vladimir V. Andreev, Vladimir M. Maslovsky, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 16
Modification of MIS Devices by Radio-Frequency Plasma Treatment
2019 · D.V. Andreev, G.G. Bondarenko, et al. · Acta Physica Polonica A · 14
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Modification of MIS Devices by Irradiation and High-Field Electron Injection Treatments
2017 · D.V. Andreev, G.G. Bondarenko, et al. · Acta Physica Polonica A · 13
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The Compact Model Synthesis for the RADFET Device
2025 · Vadim Kuznetsov, Dmitrii Andreev, et al. · Technologies · 11
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Charge effects in dielectric films of MIS structures being under high-field injection of electrons at ionizing radiation
2019 · Vladimir M. Maslovsky, Dmitrii V. Andreev, et al. · International Conference on Micro- and Nano-Electronics (ICMNE) · 10
Change in the Charge State of MOS Structures with a Radiation-Induced Charge under High-Field Injection of Electrons
2023 · D. V. Andreev, G. G. Bondarenko, et al. · Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques · 8
Use of MIS Sensors of Radiation in High-Field Electron Injection Modes
2020 · V. V. Andreev, G. G. Bondarenko, et al. · Journal of Contemporary Physics (Armenian Academy of Sciences) · 8
Modification of thin oxide films of MOS structure by high-field injection and irradiation
2016 · D V Andreev, G G Bondarenko, et al. · IOP Conference Series Materials Science and Engineering · 7
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Technique of High-Field Electron Injection for Wafer-Level Testing of Gate Dielectrics of MIS Devices
2024 · Dmitrii V. Andreev, Vladimir V. Andreev, et al. · Technologies · 6
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Technique of Time Depend Dielectric Breakdown for the Wafer-Level Testing of Thin Dielectrics of MIS Devices
2023 · D. V. Andreev, V. M. Maslovsky, et al. · Russian Microelectronics · 5
Charge Effects in the Dielectric Films of MIS Structures under the Concurrent Influence of Radiation and High-Field Electron Injection
2020 · D. V. Andreev, G. G. Bondarenko, et al. · Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques · 5
Technique of Control of the Gate Dielectric of MIS Structures Based on High-Field Charge Injection
2022 · D. V. Andreev · Inorganic Materials Applied Research · 4
Modification of bounded J-Ramp method to monitor reliability and charge degradation of gate dielectric of MIS devices
2022 · Dmitrii V. Andreev, Vladimir M. Maslovsky, et al. · International Conference on Micro- and Nano-Electronics (ICMNE) · 4
Increasing the Charge Stability of Gate Dielectric Films of MIS Structures by Doping Them with Phosphorus
2021 · D. V. Andreev, G. G. Bondarenko, et al. · Inorganic Materials Applied Research · 4
Sensors based on MIS structures for study of ionization radiations
2018 · Vladimir V. Andreev, Gennady G. Bondarenko, et al. · Moscow Workshop on Electronic and Networking Technologies (MWENT) · 4
Method of stress and measurement current levels for MIS structures researching and modifying under high-field injection of electrons
2017 · D V Andreev, G G Bondarenko, et al. · IOP Conference Series Materials Science and Engineering · 4
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Change in the Charge State of MOS Structures under Radiation and High-Field Injection at a Constant Voltage
2025 · D. V. Andreev, S. A. Kornev, et al. · Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques · 3
Accumulation and Erase of Radiation-Induced Charge in MOS Structures
2024 · D. V. Andreev · Поверхность Рентгеновские синхротронные и нейтронные исследования · 2
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Accumulation and Suppression of Radiation-Induced Charge in MOS Structures
2024 · D. V. Andreev · Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques · 2
Automatized setup for researching of MIS structures under high-field tunnel injection of electrons at stress and measurement conditions
2018 · Dmitrii V. Andreev, Gennady G. Bondarenko, et al. · Moscow Workshop on Electronic and Networking Technologies (MWENT) · 2
Modification of MIS structures by electron irradiation and high-field electron injection
2016 · D. V. Andreev, G. G. Bondarenko, et al. · Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques · 2
Charge characteristics of MOS structure with thermal SiO2 films doped with phosphorus under high-field electron injection
2016 · D. V. Andreev, G. G. Bondarenko, et al. · Inorganic Materials Applied Research · 2
Works count: 48
Citation count: 256
H-index: 8
I10-index: 8
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