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Hock Jin Quah

Observed names: H. J. QUAH, H. J. Quah, H.J. Quah, Hock-Jin Quah
ORCID: 0000-0002-7338-9489
Observed ORCID: 0000-0002-7338-9489
OpenAlex ID: A5022393457
Effects of CNTs content and milling time on mechanical behavior of MWCNT-reinforced aluminum nanocomposites
2015 · Farhad Ostovan, Khamirul Amin Matori, et al. · Materials Chemistry and Physics · 70
Effects of Postdeposition Annealing in Argon Ambient on Metallorganic Decomposed CeO[sub 2] Gate Spin Coated on Silicon
2009 · H. J. Quah, K. Y. Cheong, et al. · Journal of The Electrochemical Society · 69
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Effects of post-deposition annealing temperature in nitrogen/oxygen/nitrogen ambient on polycrystalline gallium oxide films
2021 · Puteri Haslinda Megat Abdul Hedei, Zainuriah Hassan, et al. · Applied Surface Science · 46
Electrical Properties of Pulsed Laser Deposited Y[sub 2]O[sub 3] Gate Oxide on 4H–SiC
2010 · Hock Jin Quah, Way Foong Lim, et al. · Electrochemical and Solid-State Letters · 45
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Effects of post-deposition annealing ambient on Y2O3 gate deposited on silicon by RF magnetron sputtering
2012 · Hock Jin Quah, Kuan Yew Cheong · Journal of Alloys and Compounds · 43
Investigation on structural and optical properties of SLS–ZnO glasses prepared using a conventional melt quenching technique
2015 · M. H. M. Zaid, K. A. Matori, et al. · Journal of Materials Science Materials in Electronics · 41
Comparison of metal-organic decomposed (MOD) cerium oxide (CeO2) gate deposited on GaN and SiC substrates
2011 · H.J. Quah, W.F. Lim, et al. · Journal of Crystal Growth · 41
Effects of ammonia-ambient annealing on physical and electrical characteristics of rare earth CeO2 as passivation film on silicon
2016 · Hock Jin Quah, Zainuriah Hassan, et al. · Journal of Alloys and Compounds · 35
Studying the Effect of ZnO on Physical and Elastic Properties of (ZnO)x(P2O5)1−xGlasses Using Nondestructive Ultrasonic Method
2015 · Khamirul Amin Matori, Mohd Hafiz Mohd Zaid, et al. · Advances in Materials Science and Engineering · 33
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Effects of post-deposition annealing ambient on chemical, structural, and electrical properties of RF magnetron sputtered Y2O3 gate on gallium nitride
2013 · Hock Jin Quah, Kuan Yew Cheong · Journal of Alloys and Compounds · 31
Deposition and post-deposition annealing of thin Y2O3 film on n-type Si in argon ambient
2011 · Hock Jin Quah, Kuan Yew Cheong · Materials Chemistry and Physics · 31
Effect of Postdeposition Annealing in Oxygen Ambient on Gallium-Nitride-Based MOS Capacitors With Cerium Oxide Gate
2010 · Hock Jin Quah, Kuan Yew Cheong, et al. · IEEE Transactions on Electron Devices · 31
Effects of post‐deposition annealing of cerium oxide passivation layer in nitrogen‐oxygen‐nitrogen ambient
2022 · Kammutty Musliyarakath Abdul Shekkeer, Kuan Yew Cheong, et al. · International Journal of Energy Research · 29
Effects of annealing time on the electrical properties of the Y2O3gate on silicon
2013 · Hock Jin Quah, Kuan Yew Cheong · Journal of Experimental Nanoscience · 28
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Retardation Mechanism of Ultrathin Al2O3 Interlayer on Y2O3 Passivated Gallium Nitride Surface
2014 · Hock Jin Quah, Kuan Yew Cheong · ACS Applied Materials & Interfaces · 27
Investigation of forming-gas annealed CeO2 thin film on GaN
2010 · Hock Jin Quah, Kuan Yew Cheong, et al. · Journal of Materials Science Materials in Electronics · 27
Effects of Post-Deposition Annealing on CeO2 Gate Prepared by Metal-Organic Decomposition (MOD) Method on 4H-SiC
2010 · Way Foong Lim, Kuan Yew Cheong, et al. · Materials science forum · 27
Study on Gallium Nitride-Based Metal–Oxide–Semiconductor Capacitors With RF Magnetron Sputtered $\hbox{Y}_{2}\hbox{O}_{3}$ Gate
2012 · Hock Jin Quah, Kuan Yew Cheong · IEEE Transactions on Electron Devices · 25
Effects of post-deposition annealing temperatures in argon ambient on structural, optical, and electrical characteristics of RF magnetron sputtered gallium oxide films
2022 · Puteri Haslinda Megat Abdul Hedei, Zainuriah Hassan, et al. · Journal of Materials Research and Technology · 24
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Effects of N2O Postdeposition Annealing on Metal-Organic Decomposed CeO2 Gate Oxide Spin-Coated on GaN Substrate
2011 · H. J. Quah, K. Y. Cheong, et al. · Journal of The Electrochemical Society · 24
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MOS Characteristics of Metallorganic-Decomposed CeO[sub 2] Spin-Coated on GaN
2010 · Hock Jin Quah, Kuan Yew Cheong, et al. · Electrochemical and Solid-State Letters · 24
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Alteration of structural and optical properties in quaternary Al0.1In0.1Ga0.8N films using ultraviolet assisted photo-electrochemical etching route
2015 · Way Foong Lim, Hock Jin Quah, et al. · Journal of Alloys and Compounds · 23
Passivation of silicon substrate using two-step grown ternary aluminium doped zirconium oxide
2019 · Hock Jin Quah, Zainuriah Hassan, et al. · Applied Surface Science · 22
A two-step growth route of ternary aluminium doped zirconium oxide film on silicon
2018 · Hock Jin Quah, Zainuriah Hassan, et al. · Journal of Alloys and Compounds · 20
Characterization of Waste Material Derived Willemite-Based Glass-Ceramics Doped with Erbium
2015 · G. V. Sarrigani, H. J. Quah, et al. · Advances in Materials Science and Engineering · 20
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Works count: 121
Citation count: 1,412
H-index: 22
I10-index: 53
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