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Sébastien Chenot

Observed names: CHENOT, Sebastien, Chenot, S, Chenot, S., Chenot, Sebastien, Chenot, Sébastien, S Chenot, S. Chenot, Sebastien Chenot, Sébastien Chenot, SÉbastien Chenot
Observed institutions: Soitec (France), Universitat Autònoma de Barcelona, Centre National de la Recherche Scientifique, Consejo Superior de Investigaciones Científicas, Université de Montpellier, Université Côte d'Azur, NTT (Japan), Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, NTT Basic Research Laboratories, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Laboratoire Charles Coulomb, Institut des NanoSciences de Paris, Laboratoire d'Électronique des Technologies de l'Information, Institut de Microelectrònica de Barcelona, Communauté d'universités et d'établissements Université Côte d'Azur
OpenAlex ID: A5022874034
Metasurface orbital angular momentum holography
2019 · Haoran Ren, Gauthier Briere, et al. · Nature Communications · 640
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Ptychography retrieval of fully polarized holograms from geometric-phase metasurfaces
2020 · Qinghua Song, Arthur Baroni, et al. · Nature Communications · 260
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Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy
2013 · Stéphane Brochen, Julien Brault, et al. · Applied Physics Letters · 152
Broadband decoupling of intensity and polarization with vectorial Fourier metasurfaces
2021 · Qinghua Song, Arthur Baroni, et al. · Nature Communications · 114
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Full InGaN red light emitting diodes
2020 · A. Dussaigne, F. Barbier, et al. · Journal of Applied Physics · 90
GaN transistor characteristics at elevated temperatures
2009 · A. Pérez-Tomás, M. Placidi, et al. · Journal of Applied Physics · 89
Bandwidth-unlimited polarization-maintaining metasurfaces
2021 · Q. Song, S. Khadir, et al. · Science Advances · 84
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Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates
2013 · A. Pérez-Tomás, A. Fontserè, et al. · Journal of Applied Physics · 71
Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults
2014 · Florian Tendille, Philippe De Mierry, et al. · Journal of Crystal Growth · 69
Comparison between Polar (0001) and Semipolar (1122) Nitride Blue–Green Light-Emitting Diodes Grown on c- and m-Plane Sapphire Substrates
2009 · Philippe De Mierry, Tobias Guehne, et al. · Japanese Journal of Applied Physics · 62
The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)
2009 · N. Baron, Y. Cordier, et al. · Journal of Applied Physics · 60
Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching
2010 · P. de Mierry, N. Kriouche, et al. · Applied Physics Letters · 57
An Etching‐Free Approach Toward Large‐Scale Light‐Emitting Metasurfaces
2019 · Gauthier Brière, Peinan Ni, et al. · Advanced Optical Materials · 55
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Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN
2011 · A. Fontserè, A. Pérez-Tomás, et al. · Applied Physics Letters · 55
Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)
2008 · Yvon Cordier, Jean-Christophe Moreno, et al. · IEEE Electron Device Letters · 55
Ultra-violet GaN/Al0.5Ga0.5N quantum dot based light emitting diodes
2012 · J. Brault, B. Damilano, et al. · Journal of Crystal Growth · 54
AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)
2008 · Yvon Cordier, Marc Portail, et al. · Journal of Crystal Growth · 52
Selective area growth of Ga‐polar GaN nanowire arrays by continuous‐flow MOVPE: A systematic study on the effect of growth conditions on the array properties
2015 · Pierre‐Marie Coulon, Blandine Alloing, et al. · physica status solidi (b) · 40
High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates
2008 · R. Cuerdo, F. Calle, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 39
AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination
2007 · Y. Cordier, M. Azize, et al. · Journal of Crystal Growth · 39
Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes
2019 · V. Fan Arcara, B. Damilano, et al. · Journal of Applied Physics · 38
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Printing polarization and phase at the optical diffraction limit: near‐ and far‐field optical encryption
2020 · Qinghua Song, Samira Khadir, et al. · Nanophotonics · 37
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Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC
2012 · M. Portail, A. Michon, et al. · Journal of Crystal Growth · 37
Polar and semipolar GaN/Al0.5Ga0.5N nanostructures for UV light emitters
2014 · J Brault, D Rosales, et al. · Semiconductor Science and Technology · 36
Telecom single‐photon emitters in GaN operating at room temperature: embedment into bullseye antennas
2023 · Max Meunier, John J. H. Eng, et al. · Nanophotonics · 34
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Works count: 194
Citation count: 3,377
H-index: 30
I10-index: 71
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