GaN transistor characteristics at elevated temperatures
Year: 2009
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.3240337
Authors: A. Pérez-Tomás, M. Placidi, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, A. Constant, P. Godignon, J. Millán
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2074419573