Author

J. C. Moreno

Observed names: J C Moreno, J-C. Moreno, J.-C. Moreno, J.-Ch. Moreno, J.C. Moreno, J.‐C. Moreno

Observed institutions: Universitat Autònoma de Barcelona, Centre National de la Recherche Scientifique, Consejo Superior de Investigaciones Científicas, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Institut de Microelectrònica de Barcelona

OpenAlex ID: A5110090245

Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

2008 · T. D. Veal, P. D. C. King, et al. · Applied Physics Letters · 93

GaN transistor characteristics at elevated temperatures

2009 · A. Pérez-Tomás, M. Placidi, et al. · Journal of Applied Physics · 89

Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

2013 · A. Pérez-Tomás, A. Fontserè, et al. · Journal of Applied Physics · 70

Experimental observation of strong light-matter coupling in ZnO microcavities: Influence of large excitonic absorption

2009 · F. Médard, J. Zuniga-Perez, et al. · Physical Review B · 60

Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN

2011 · A. Fontserè, A. Pérez-Tomás, et al. · Applied Physics Letters · 55

Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature

2009 · S. Faure, C. Brimont, et al. · Applied Physics Letters · 44

Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET

2011 · A. Fontserè, A. Pérez-Tomás, et al. · Microelectronic Engineering · 30

Growth of GaN based structures on Si(110) by molecular beam epitaxy

2010 · Y. Cordier, J.-C. Moreno, et al. · Journal of Crystal Growth · 30

Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance

2012 · A Pérez-Tomás, A Fontserè, et al. · Semiconductor Science and Technology · 29

Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

2012 · A. Fontserè, A. Pérez-Tomás, et al. · Applied Physics Letters · 23

Interfacial properties of AlN and oxidized AlN on Si

2009 · M. Placidi, A. Pérez-Tomás, et al. · Surface Science · 19

Bulk Temperature Impact on the AlGaN/GaN HEMT Forward Current on Si, Sapphire and Free-Standing GaN

2012 · A. Fontsere, A. Perez-Tomas, et al. · ECS Solid State Letters · 17

Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors

2012 · A Fontserè, A Pérez-Tomás, et al. · Nanotechnology · 16

AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001)

2009 · Y. Cordier, J.‐C. Moreno, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 15

Highly sensitive strained AlN on Si(111) resonators

2008 · M. Placidi, J.C. Moreno, et al. · Sensors and Actuators A Physical · 14

Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

2009 · Y. Cordier, F. Semond, et al. · Materials Science in Semiconductor Processing · 12

Influence of the excitonic broadening on the strong light-matter coupling in bulk zinc oxide microcavities

2010 · F. Médard, D. Lagarde, et al. · Journal of Applied Physics · 11

GaN Ohmic contact resistance vs temperature

2011 · A. Fontsere, A. Perez-Tomas, et al. · Spanish Conference on Electron Devices · 10

GaN quantum dots in (Al,Ga)N-based Microdisks

2010 · S Sergent, J C Moreno, et al. · Journal of Physics Conference Series · 10

Optical study of bulk ZnO for strong coupling observation in ZnO-based microcavities

2008 · F. Médard, J. Zúñiga-Perez, et al. · Photonics and Nanostructures - Fundamentals and Applications · 9

Windowed growth of AlGaN/GaN heterostructures on Silicon 〈111〉 substrates for future MOS integration

2009 · P. Chyurlia, F. Semond, et al. · physica status solidi (a) · 7

Effects of substrate orientation on the optical anisotropy spectra of GaN/AlN/Si heterostructures in the energy range from 2.0 to 3.5 eV

2012 · L. F. Lastras-Martínez, R. E. Balderas-Navarro, et al. · Journal of Applied Physics · 6

2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility

2010 · Amador Pérez-Tomás, Marcel Placidi, et al. · Materials science forum · 5

Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire

2013 · A. Fontserè, A. Pérez-Tomás, et al. · Applied Physics Letters · 4

Reverse current thermal activation of AlGaN/GaN HEMTs on Si(111)

2012 · A. Fontserè, A. Pérez-Tomás, et al. · Microelectronics Reliability · 4

Works count: 29

Citation count: 688

H-index: 14

I10-index: 19