Work

Interfacial properties of AlN and oxidized AlN on Si

Year: 2009

Type: article

Source: Surface Science

DOI: 10.1016/j.susc.2009.10.022

Authors: M. Placidi, A. Pérez-Tomás, J.C. Moreno, E. Frayssinet, F. Semond, A. Constant, P. Godignon, N. Mestres, A. Crespi, J. Millán

Institutions: Centro Nacional de Microelectrónica, Institut de Microelectrònica de Barcelona, Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Institut de Ciència de Materials de Barcelona

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2012698366

FWCI: 1.031

Cites: 27

Cited by: 19

Related to: 10