Work

Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Year: 2009

Type: article

Source: Materials Science in Semiconductor Processing

DOI: 10.1016/j.mssp.2009.07.003

Authors: Y. Cordier, F. Semond, J-C. Moreno, E. Frayssinet, B. Benbakhti, Z. Cao, S. Chenot, L. Nguyen, O. Tottereau, A. Soltani, K. Blary

Institutions: Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Institut d'Electronique, de Microélectronique et de Nanotechnologie

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2069628152

FWCI: 0.615

Cites: 11

Cited by: 12

Related to: 10