Work

Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET

Year: 2011

Type: article

Source: Microelectronic Engineering

DOI: 10.1016/j.mee.2011.06.015

Authors: A. Fontserè, A. Pérez-Tomás, M. Placidi, P. Fernández-Martínez, N. Baron, S. Chenot, Y. Cordier, J.C. Moreno, P.M. Gammon, M.R. Jennings

Institutions: Consejo Superior de Investigaciones Científicas, Institut de Microelectrònica de Barcelona, Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, University of Warwick

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2081845239

FWCI: 1.445

Cites: 26

Cited by: 30

Related to: 10