2008 · R. Cuerdo, F. Calle, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 39

AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination

2007 · Y. Cordier, M. Azize, et al. · Journal of Crystal Growth · 39

11‐3: Overlooked Challenges for microLED Displays

2019 · Eric H. Virey, Nicolas Baron, et al. · SID Symposium Digest of Technical Papers · 36

Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET

2011 · A. Fontserè, A. Pérez-Tomás, et al. · Microelectronic Engineering · 30

Growth of GaN based structures on Si(110) by molecular beam epitaxy

2010 · Y. Cordier, J.-C. Moreno, et al. · Journal of Crystal Growth · 30

Temperature impact and analytical modeling of the AlGaN/GaN-on-Si saturation drain current and transconductance

2012 · A Pérez-Tomás, A Fontserè, et al. · Semiconductor Science and Technology · 29

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30‐4: MicroLED Display Technology Trends and Intellectual Property Landscape

2020 · Eric H. Virey, Nicolas Baron, et al. · SID Symposium Digest of Technical Papers · 25

In situ measurements of wafer bending curvature during growth of group-III-nitride layers on silicon by molecular beam epitaxy

2007 · Y. Cordier, N. Baron, et al. · Journal of Crystal Growth · 24

Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

2012 · A. Fontserè, A. Pérez-Tomás, et al. · Applied Physics Letters · 23

Strain engineering in GaN layers grown on silicon by molecular beam epitaxy: The critical role of growth temperature

2008 · Y. Cordier, N. Baron, et al. · Journal of Crystal Growth · 22

Investigation of AlGaN∕AlN∕GaN heterostructures for magnetic sensor application from liquid helium temperature to 300°C

2008 · L. Bouguen, S. Contreras, et al. · Applied Physics Letters · 18

Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures

2007 · Y. Cordier, M. Azize, et al. · Journal of Crystal Growth · 18

Bulk Temperature Impact on the AlGaN/GaN HEMT Forward Current on Si, Sapphire and Free-Standing GaN

2012 · A. Fontsere, A. Perez-Tomas, et al. · ECS Solid State Letters · 17

Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors

2012 · A Fontserè, A Pérez-Tomás, et al. · Nanotechnology · 16

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AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001)

2009 · Y. Cordier, J.‐C. Moreno, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 15

GaN Ohmic contact resistance vs temperature

2011 · A. Fontsere, A. Perez-Tomas, et al. · Spanish Conference on Electron Devices · 10

Evaluation of SiN films for AlGaN/GaN MIS‐HEMTs on Si(111)

2009 · Y. Cordier, A. Lecotonnec, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 8

Crack Statististics and Stress Analysis of Thick GaN on Patterned Silicon Substrate

2018 · Tasnia Hossain, Mohammad Junaebur Rashid, et al. · physica status solidi (b) · 7

Works count: 39

Citation count: 912

H-index: 18

I10-index: 23