Work

Evaluation of SiN films for AlGaN/GaN MIS‐HEMTs on Si(111)

Year: 2009

Type: article

Abstract: In this work, AlGaN/GaN HEMT structures grown on Si(111) substrates were covered with SiNx dielectric films, in order to realize MIS‐HEMT devices. The dielectric films have been deposited by plasma enhanced chemical vapor deposition using deposition conditions previously optimized for InP based devices. X‐ray photoelectron spectroscopy was used to control the interface formation and characterize the deposited films. Capacitance‐voltage, Hall effect and current‐voltage measurements were carried out on the MIS‐HEMTs and HEMT reference devices and correlated with the dielectric layer quality. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Source: Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

DOI: 10.1002/pssc.200880870

Authors: Y. Cordier, A. Lecotonnec, S. Chenot, N. Baron, F. Nacer, A. Goullet, H. Lhermite, M. El Kazzi, P. Regreny, G. Hollinger, M. P. Besland

Institutions: Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Institut des Matériaux Jean Rouxel, Université de Nantes, Nantes Université, Institut d'Électronique et des Technologies du numéRique, Université Rennes 1, Université de Rennes, École Centrale de Lyon, Institut des Nanotechnologies de Lyon

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W1965538652

FWCI: 1.025

Cites:

Cited by: 8

Related to: 10