Work

2DEG HEMT Mobility vs Inversion Channel MOSFET Mobility

Year: 2010

Type: article

Abstract: Channel mobility properties of SiC and GaN based MOSFETs and AlGaN/GaN HEMTs are compared in this paper. For a similar active area, the specific on-resistance of the MOSFET is much larger than the on-resistance for the HEMT, which is depending on the electron mobility in their respective channels. Physically-based models are used to fit this experimental transistor mobility.

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.645-648.1207

Authors: Amador Pérez-Tomás, Marcel Placidi, N. Baron, Sébastien Chenot, Yvon Cordier, J.C. Moreno, José Millan, Philippe Godignon

Institutions: Universitat Autònoma de Barcelona, Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Consejo Superior de Investigaciones Científicas, Institut de Microelectrònica de Barcelona

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W2020282610

FWCI:

Cites: 5

Cited by: 5

Related to: 10