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A. Spitzer

Observed name: A Spitzer
Institution: EV Group (Austria)
ORCID: 0000-0003-2586-3083
Observed ORCID: 0000-0003-2586-3083
OpenAlex ID: A5023121600
The adsorption of oxygen on copper surfaces
1982 · A. Spitzer, H. Lüth · Surface Science · 220
The adsorption of oxygen on copper surfaces
1982 · A. Spitzer, H. Lüth · Surface Science · 162
The adsorption of water on clean and oxygen covered Cu(110)
1982 · A. Spitzer, H. Lüth · Surface Science · 131
A novel capacitor technology based on porous silicon
1996 · V Lehmann, W Hönlein, et al. · Thin Solid Films · 115
Low-pressure deposition of high-quality SiO2 films by pyrolysis of tetraethylorthosilicate
1987 · F. S. Becker, D. Pawlik, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 105
The adsorption of water on Pt(111) studied by irreflection and UV-photoemission spectroscopy
1984 · E. Langenbach, A. Spitzer, et al. · Surface Science · 97
Challenges for the DRAM cell scaling to 40nm
2006 · W. Mueller, G. Aichmayr, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 89
The adsorption of methanol on Pt(111), an IR reflection and UV photoemission study
1985 · D.H. Ehlers, A. Spitzer, et al. · Surface Science · 77
An XPS study of the water adsorption on Cu(110)
1985 · A. Spitzer, H. Lüth · Surface Science · 74
The adsorption of CO on Cu surfaces studied by electron energy loss spectroscopy
1981 · A. Spitzer, H. Lüth · Surface Science · 52
The adsorption of H2O on Cu(100) surfaces
1985 · A. Spitzer, A. Ritz, et al. · Surface Science · 50
Lifetime of thin oxide and oxide-nitride-oxide dielectrics within trench capacitors for DRAMs
1989 · P. Hiergeist, A. Spitzer, et al. · IEEE Transactions on Electron Devices · 40
Coadsorption of CO with methanol, water and xenon on Pt(111): Band suppression in vibrational spectroscopy
1987 · D.H. Ehlers, A.P. Esser, et al. · Surface Science · 38
Adsorption and dissociation of N2 O on copper single-crystal surfaces
1984 · A. Spitzer, H. Lüth · Physical review. B, Condensed matter · 35
Comprehensive analysis of the degradation of a lateral DMOS due to hot carrier stress
2009 · E. Riedlberger, C. Jungemann, et al. · IEEE International Integrated Reliability Workshop final report · 21
Equipment simulation of SiGe heteroepitaxy: Model validation byab initiocalculations of surface diffusion processes
1997 · M. Hierlemann, C. Werner, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 21
Electrical breakdown induced by silicon nitride roughness in thin oxide–nitride–oxide films
1996 · H. Reisinger, A. Spitzer · Journal of Applied Physics · 17
Improvement of oxide quality by rapid thermal annealing
1990 · H. Wendt, A. Spitzer, et al. · Journal of Applied Physics · 17
The physics of ONO layer dielectrics
1989 · A. Spitzer, R. Baunach · Applied Surface Science · 17
Sn overlayers on GaAs(110): Growth mechanism and band bending
1985 · N. Bündgens, H. Lüth, et al. · Surface Science · 17
Interfacial tunneling barrier heights in triple-layer dielectrics
1987 · R. Baunach, A. Spitzer · Applied Surface Science · 15
Wavevector-resolved electron-energy-loss spectroscopy on the dangling-bond states of Ge(111)-(2 × 1)
1984 · A. Ritz, A. Spitzer, et al. · Surface Science · 15
Modeling the lifetime of a lateral DMOS transistor in repetitive clamping mode
2010 · E. Riedlberger, R. Keller, et al. · IEEE International Reliability Physics Symposium proceedings · 13
Adsorption of ethylene on clean and oxygen precovered Cu(110) surfaces
1984 · A. Ritz, A. Spitzer, et al. · Applied Physics A · 13
Charge trapping characteristics of multilayer dielectrics in metal-insulator semiconductor structures
1988 · R. Baunach, A. Spitzer · Journal of Applied Physics · 7
Works count: 37
Citation count: 1,482
H-index: 17
I10-index: 24
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