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D. Cohen-Elias

Observed names: D. C. Elias, D. Cohen Elias, D. Elias, D.C. Elias, Doron C. Elias, Doron Cohen Elias, Doron Cohen-Elias, Doron Cohen‐Elias, Doron Elias
ORCID: 0000-0002-9286-7554
Observed ORCIDs: 0000-0002-9286-7554, 0000-0001-8723-5598
OpenAlex ID: A5023595216
InGaAs/GaAsSb Type-II superlattice based photodiodes for short wave infrared detection
2017 · Y. Uliel, D. Cohen-Elias, et al. · Infrared Physics & Technology · 50
High performance raised source/drain InAs/In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer
2013 · Sanghoon Lee, Cheng-Ying Huang, et al. · Applied Physics Letters · 41
Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting $I_{{\scriptstyle {\rm ON}}}=482~\mu{\rm A}/\mu{\rm m}$ at $I_{{\scriptstyle {\rm OFF}}}=100~{\rm nA}/\mu{\rm m}$ and $V_{\rm DD}=0.5~{\rm V}$
2014 · Sanghoon Lee, Cheng-Ying Huang, et al. · IEEE Electron Device Letters · 32
Minority carrier diffusion length for electrons in an extended SWIR InAs/AlSb type-II superlattice photodiode
2017 · D. Cohen-Elias, N. Snapi, et al. · Applied Physics Letters · 31
Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed $\Gamma$-L Valleys
2013 · Saumitra R. Mehrotra, Michael Povolotskyi, et al. · IEEE Electron Device Letters · 28
Short wavelength infrared InAs/InSb/AlSb type-II superlattice photodetector
2017 · D. Cohen-Elias, Y. Uliel, et al. · Infrared Physics & Technology · 26
High responsivity InGaAsSb p–n photodetector for extended SWIR detection
2021 · I. Shafir, N. Snapi, et al. · Applied Physics Letters · 20
A fast avalanche Si diode with a 517 μ m low-doped region
2020 · Amit S. Kesar, Arie Raizman, et al. · Applied Physics Letters · 18
Controlling graphene work function by doping in a MOCVD reactor
2018 · Chen Klein, Doron Cohen-Elias, et al. · Heliyon · 18
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Improved performances InAs/AlSb Type-II superlattice photodiodes for eSWIR with L of 2.4 µm and QE of 38% at 300 K
2020 · I. Shafir, D. Cohen-Elias, et al. · Infrared Physics & Technology · 16
T2SL/InP/T2SL pBp extended SWIR barriode with InGaAs/GaAsSb absorption material lattice matched to InP
2022 · I. Shafir, D.C. Elias, et al. · Infrared Physics & Technology · 15
An abrupt InP-GaInAs-InP DHBT
2004 · D.C. Elias, S. Kraus, et al. · IEEE Electron Device Letters · 14
Short wavelength infrared pBn GaSb/AlAsSb/InPSb photodetector
2017 · D. Cohen-Elias, Y. Uliel, et al. · Infrared Physics & Technology · 13
Nanometer InP electron devices for VLSI and THz applications
2014 · M. J. W. Rodwell, S. Lee, et al. · Conference digest · 12
An InP HBT-Based Oscillator Monolithically Integrated With a Photodiode
2008 · Evgeny Shumakher, Tsufit Magrisso, et al. · Journal of Lightwave Technology · 12
A 1-kV, 0.84-kV/ns Epi-Si Drift-Step-Recovery Diode
2023 · Amit S. Kesar, Michael Wolf, et al. · IEEE Transactions on Plasma Science · 11
Growth of InGaAs/GaAsSb type II superlattice for eSWIR photodetector using MOCVD
2018 · D.C. Elias, I. Shafir, et al. · Infrared Physics & Technology · 11
Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy
2015 · Valentin Garbe, Barbara Abendroth, et al. · Crystal Research and Technology · 10
Reduction of leakage current in In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors using AlAs0.56Sb0.44 confinement layers
2013 · Cheng-Ying Huang, Sanghoon Lee, et al. · Applied Physics Letters · 8
A Degenerately Doped $\hbox{In}_{0.53}\hbox{Ga}_{0.47} \hbox{As}$ Bipolar Junction Transistor
2010 · E. Yalon, D. Cohen Elias, et al. · IEEE Electron Device Letters · 7
Development of a Semiconductor Opening Switch at Soreq NRC
2024 · Amit S. Kesar, Arie Raizman, et al. · IEEE Transactions on Plasma Science · 6
Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy
2015 · Valentin Garbe, Barbara Abendroth, et al. · Crystal Research and Technology · 6
Formation of sub-10 nm width InGaAs finFETs of 200 nm height by atomic layer epitaxy
2013 · D. Cohen-Elias, J. J. M. Law, et al. · Conference digest · 6
A Double-Heterojunction Bipolar Transistor Having a Degenerately Doped Emitter and Backward-Diode Base Contact
2011 · D. Cohen-Elias, S. Kraus, et al. · IEEE Transactions on Electron Devices · 6
The Role of Interface Band Alignment in Epitaxial SrTiO3/GaAs Heterojunctions
2024 · Shaked Caspi, Maria Baskin, et al. · ACS Applied Electronic Materials · 5
Works count: 49
Citation count: 458
H-index: 13
I10-index: 18
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