Author

Guenole Jan

Observed institutions: IBM (United States), TDK (Japan)

OpenAlex ID: A5023943472

Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

2014 · Luc Thomas, Guenole Jan, et al. · Journal of Applied Physics · 260

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

2010 · Tai Min, Qiang Chen, et al. · IEEE Transactions on Magnetics · 135

High Spin Torque Efficiency of Magnetic Tunnel Junctions with MgO/CoFeB/MgO Free Layer

2012 · Guenole Jan, Yu-Jen Wang, et al. · Applied Physics Express · 93

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Quantifying data retention of perpendicular spin-transfer-torque magnetic random access memory chips using an effective thermal stability factor method

2015 · Luc Thomas, Guenole Jan, et al. · Applied Physics Letters · 69

High-temperature thermal stability driven by magnetization dilution in CoFeB free layers for spin-transfer-torque magnetic random access memory

2018 · Jodi M. Iwata-Harms, Guenole Jan, et al. · Scientific Reports · 66

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Demonstration of fully functional 8Mb perpendicular STT-MRAM chips with sub-5ns writing for non-volatile embedded memories

2014 · Guenole Jan, Luc Thomas, et al. · Symposium on VLSI Technology · 66

Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory

2019 · Jodi M. Iwata-Harms, Guenole Jan, et al. · Scientific Reports · 49

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Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM

2015 · Luc Thomas, Guenole Jan, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 38

Achieving Sub-ns switching of STT-MRAM for future embedded LLC applications through improvement of nucleation and propagation switching mechanisms

2016 · Guenole Jan, Luc Thomas, et al. · Symposium on VLSI Technology · 36

Demonstration of Ultra-Low Voltage and Ultra Low Power STT-MRAM designed for compatibility with 0x node embedded LLC applications

2018 · Guenole Jan, Luc Thomas, et al. · Symposium on VLSI Technology · 34

Reliability study of perpendicular STT-MRAM as emerging embedded memory qualified for reflow soldering at 260°C

2016 · Meng-Chun Shih, Chia-Yu Wang, et al. · Symposium on VLSI Technology · 24

STT-MRAM devices with low damping and moment optimized for LLC applications at Ox nodes

2018 · Luc Thomas, Guenole Jan, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 20

Probing magnetic properties of STT-MRAM devices down to sub-20 nm using spin-torque FMR

2017 · Luc Thomas, Guenole Jan, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 17

Demonstration of an MgO based anti-fuse OTP design integrated with a fully functional STT-MRAM at the Mbit level

2015 · Guenole Jan, Luc Thomas, et al. · Symposium on VLSI Technology · 12

A fully-functional 90nm 8Mb STT MRAM demonstrator featuring trimmed, reference cell-based sensing

2015 · John DeBrosse, Thomas Maffitt, et al. · Custom Integrated Circuits Conference · 11

Impact of external magnetic field on embedded perpendicular STT-MRAM technology qualified for solder reflow

2017 · Chia-Yu Wang, Meng-Chun Shih, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 10

STT-MRAM for embedded memory applications from eNVM to last level cache

2017 · Luc Thomas, Guenole Jan, et al. · IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference · 6

Comprehensive Reliability Study of STT-MRAM Devices and Chips for Last Level Cache Applications (LLC) at 0x Nodes

2019 · Jian Zhu, Yuan-Jen Lee, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 1

Perpendicular Stt-Mram Scaling Challenges and Potential Solutions

2016 · Tom Zhong, Luc Thomas, et al. · ECS Meeting Abstracts

Role of defects in the interfacial conductivity at interfaces in Pt/ SrTiO3/Pt heterostructures

2009 · Naga Phani B. Aetukuri, Guenole Jan, et al. · Bulletin of the American Physical Society

Bias voltage dependence of the tunneling magneto-resistance of SrTiO3 based magnetic tunnel junctions grown epitaxially on Si (100)

2005 · Guenole Jan, Mahesh G. Samant, et al. · Bulletin of the American Physical Society

Works count: 21

Citation count: 947

H-index: 13

I10-index: 16