1999 · N.E.B Cowern, D Alquier, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 51

An investigation of as-implanted material formed by high dose 40 keV oxygen implantation into silicon at 550 °C

1993 · Y. Li, J. A. Kilner, et al. · Journal of Applied Physics · 46

In Situ Studies of the Interaction of Dislocations with Point Defects during Annealing of Ion Implanted Si/SiGe/Si (001) Heterostructures

1998 · Eric A. Stach, Robert Hull, et al. · Microscopy and Microanalysis · 41

Accurate RBS measurement of ion implant doses in silicon

2002 · G. Boudreault, C. Jeynes, et al. · Surface and Interface Analysis · 32

Is there an effect of the proximity of a “free-surface” on the formation of End-Of-Range defects?

1996 · M. Omri, C. Bonafos, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 28

Parametrization of the Gaussian Disorder Model to Account for the High Carrier Mobility in Disordered Organic Transistors

2021 · Yongjeong Lee, Sungyeop Jung, et al. · Physical Review Applied · 25

Interstitial trapping efficiency of C+ implanted into preamorphised silicon — control of EOR defects

1997 · F. Cristiano, C. Bonafos, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 25

New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

2021 · Benjamin Iniguez, Arokia Nathan, et al. · IEEE Journal of the Electron Devices Society · 22

PDF

Advanced Design Methods From Materials and Devices to Circuits for Brain-Inspired Oscillatory Neural Networks for Edge Computing

2021 · Stefania Carapezzi, Gabriele Boschetto, et al. · IEEE Journal on Emerging and Selected Topics in Circuits and Systems · 21

Role of ambient temperature in modulation of behavior of vanadium dioxide volatile memristors and oscillators for neuromorphic applications

2022 · Stefania Carapezzi, Corentin Delacour, et al. · Scientific Reports · 19

PDF

Modelling of organic field-effect transistors for technology and circuit design

2008 · S. Mijalkovic, D. Green, et al. · IEEE International Conference on Microelectronics (MIEL) · 19

Formation of extended defects and strain relaxation in ion beam synthesised SiGe alloys

1999 · F Cristiano, A Nejim, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 19

The Effects of Dose and Target Temperature on Low Energy SIMOX Layers

1993 · Y. Li, J. A. Kilner, et al. · Journal of The Electrochemical Society · 19

Parameter Extraction and Evaluation of UOTFT Model for Organic Thin-Film Transistor Circuit Design

2013 · Burag Yaglioglu, Tiziano Agostinelli, et al. · Journal of Display Technology · 17

A new chemical etch for defects studies in very thin film (< 1000 Å) SIMOX material

1993 · L.F. Giles, A. Nejim, et al. · Materials Chemistry and Physics · 17

3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)

2018 · Francesco La Via, Fabrizio Roccaforte, et al. · Materials science forum · 15

PDF

Ge+ ion implantation — a competing technology?

1995 · P.L.F. Hemment, F. Cristiano, et al. · Journal of Crystal Growth · 14

Oxygen isotopic exchange between an 18O+ implanted Si layer and a natural SiO2 capping layer during high-temperature annealing

1993 · Yupu Li, J. A. Kilner, et al. · Applied Physics Letters · 14

Retarding transient enhanced diffusion of boron in silicon with high energy silicon co-implants

2003 · A Nejim, B J Sealy · Semiconductor Science and Technology · 13

PDF

Characterization of extended defects in SiGe alloys formed by high dose Ge+ implantation into Si

1996 · F. Cristiano, A. Nejim, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 13

Works count: 114

Citation count: 1,472

H-index: 18

I10-index: 37