2007 · Y. C. Choi, J. Shi, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 23

Influence of acceptor-like traps in the buffer on current collapse and leakage of E-mode AlGaN/GaN MISHFETs

2013 · Chenjie Tang, Junxia Shi · Semiconductor Science and Technology · 21

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Influence of delta doping on intersubband transition and absorption in AlGaN/GaN step quantum wells for terahertz applications

2015 · Chenjie Tang, Junxia Shi · Physica E Low-dimensional Systems and Nanostructures · 19

AlGaAs/GaAs Triple Quantum Well Photodetector at $5~\mu \text{m}$ Wavelength—A Simulation Study

2016 · Chenjie Tang, Yi Lan, et al. · IEEE Journal of Quantum Electronics · 18

Effect of growth temperature on Eu incorporation in GaN powders

2007 · Junxia Shi, M.V.S. Chandrashekhar, et al. · Journal of Crystal Growth · 15

High-κ insulating materials for AlGaN/GaN metal insulator semiconductor heterojunction field effect transistors

2014 · Albert Colón, Junxia Shi · Solid-State Electronics · 14

Au-free low-temperature ohmic contacts for AlGaN/AlN/GaN heterostructures

2020 · Xiaowei Wang, Hsien-Chih Huang, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 13

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A Ni3(OH)(COO)6 −based MOF from C3 symmetric ligands: Structure and heterogeneous catalytic activities in one-pot synthesis of imine

2019 · Jing-Yi Tan, Jun-Xia Shi, et al. · Microporous and Mesoporous Materials · 13

High intensity red emission from Eu doped GaN powders

2008 · Junxia Shi, M. V. S. Chandrashekhar, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 10

Spin-dependent magneto-thermopower of narrow-gap lead chalcogenide quantum wells

2018 · Parijat Sengupta, Yu Wen, et al. · Scientific Reports · 9

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Incorporation of Al or Hf in atomic layer deposition TiO2 for ternary dielectric gate insulation of InAlN/GaN and AlGaN/GaN metal-insulator-semiconductor-heterojunction structure

2016 · Albert Colon, Liliana Stan, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 9

Simulation of GaN HEMT with wide-linear-range transconductance

2017 · Chenjie Tang, Koon Hoo Teo, et al. · IEEE Conference on Electron Devices and Solid-State Circuits · 8

High breakdown voltage AlGaN/GaN heterojunction field effect transistors on sapphire

2008 · Junxia Shi, Y. C. Choi, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 8

N-donor ligand driven CdII-based coordination polymers: Synthesis, structures and highly selective luminescence sensing for Fe3+ ions

2019 · Jun-Xia Shi, Jing-Yi Tan, et al. · Inorganica Chimica Acta · 7

Supramolecular isomerism in cadmium (II) coordination polymers from benzene-1,3,5-tribenzoate (BTB): Syntheses, structures and luminescent properties

2017 · Jian-Yong Zhang, Peng-Hui Cui, et al. · Journal of Solid State Chemistry · 7

Strain Effects on the Interaction Between NO2 and the Mo-Edge of the MoS2 Zigzag Nanoribbon

2017 · Xiaowei Wang, Junxia Shi · IEEE Transactions on Nanotechnology · 7

Works count: 57

Citation count: 605

H-index: 14

I10-index: 18