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Фелицын Владислав Александрович

Observed names: V A Felitsyn, V. A. Felitsyn, V. Felitsyn, V.A. Felitsyn, Vladislav A. Felitsyn, Vladislav Felitsyn, Фелицын В.А., Фелицын, В.А., Фелицын, Владислав Александрович
ORCID: 0000-0002-8888-5928
Observed ORCID: 0000-0002-8888-5928
OpenAlex ID: A5028383204
Compact Modeling of MOSFET I-V Characteristics and Simulation of Dose-Dependent Drain Currents
2017 · Gennady I. Zebrev, Vasily V. Orlov, et al. · IEEE Transactions on Nuclear Science · 19
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Compact modeling of I-V characteristics in irradiated MOSFETs: Impact of operation temperature and interface traps
2016 · V. V. Orlov, V. A. Felitsyn, et al. · European Conference on Radiation and Its Effects on Components and Systems · 8
TID Effects in One Time Programmable Read Only Memory at Different Dose Rates
2018 · Alexander S. Bakerenkov, Sergey B. Shmakov, et al. · IEEE Nuclear and Space Radiation Effects Conference (NSREC) · 7
Characterization of Widely Used Bipolar Transistors in Wide Temperature Range Before and After Ionizing Radiation Impact
2018 · Alexander S. Bakerenkov, Aleksandr E. Koziukov, et al. · IEEE Nuclear and Space Radiation Effects Conference (NSREC) · 7
Temperature influence on the TID effects in RadFETs
2017 · V. Felitsyn, B. Podlepetsky, et al. · IEEE International Conference on Microelectronics (MIEL) · 7
TID Response of AD590 Temperature Sensor in Wide Operation Temperature Range
2018 · Alexander S. Bakerenkov, Vladislav A. Felitsyn, et al. · IEEE Nuclear and Space Radiation Effects Conference (NSREC) · 6
The Impact of Annealing on the Following Radiation Degradation Rate of Bipolar Devices
2017 · Alexander S. Bakerenkov, Alexander S. Rodin, et al. · IEEE Radiation Effects Data Workshop (REDW) · 6
Radiation Degradation of Temperature Dependences of Electrical Parameters of Bipolar Operational Amplifiers
2019 · Alexander S. Bakerenkov, Viacheslav S. Pershenkov, et al. · IEEE Radiation Effects Data Workshop (REDW) · 5
ELDRS Susceptibility of Bipolar Transistors and Integrated Circuits During Low Temperature Irradiation
2017 · Alexander Bakerenkov, Viacheslav Pershenkov, et al. · IEEE Transactions on Nuclear Science · 5
Multifunctional Equipment and Test Results for Total Ionizing Dose Testing of Analog Integrated Circuits
2016 · Alexander S. Bakerenkov, Pavel A. Chubunov, et al. · IEEE Radiation Effects Data Workshop (REDW) · 5
Evaluation of the Post-Irradiation Temperature Dependence of Operational Amplifier Input Bias Current
2015 · Alexander S. Rodin, Alexander S. Bakerenkov, et al. · European Conference on Radiation and Its Effects on Components and Systems · 5
TID Sensor Based on a Bipolar Transistor
2020 · Alexander S. Bakerenkov, Viacheslav S. Pershenkov, et al. · IEEE Radiation Effects Data Workshop (REDW) · 4
Effect of Temperature and Electrical Modes on Radiation Sensitivity of MISFET Dose Sensors
2018 · Boris Podlepetsky, Viacheslav Pershenkov, et al. · EUROSENSORS Conference (EUROSENSORS) · 4
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Total Dose Radiation Response of n-Channel Enhancement Mode Field Effect Transistors over Wide Operation Temperature Range
2017 · Alexander S. Bakerenkov, Vladislav A. Felitsyn, et al. · IEEE Radiation Effects Data Workshop (REDW) · 4
ELDRS in SiGe transistors for room and low-temperature irradiation
2016 · V.S. Pershenkov, A.S. Bakerenkov, et al. · Microelectronics Reliability · 4
Enhanced low dose rate sensitivity (ELDRS) and reduced low dose rate sensitivity (RLDRS) in bipolar devices
2020 · Vyacheslav Pershenkov, Alexander Bakerenkov, et al. · Facta universitatis - series Electronics and Energetics · 3
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Effect of elevated temperature irradiation on bipolar devices for space application
2019 · Viacheslav S. Pershenkov, Vitaliy A. Telets, et al. · Radiation effects and defects in solids · 3
The Issue of Using Test Dose Rate 10 mrad(Si)/s for ELDRS Prediction in MIL-STD-883-H
2015 · Alexander T. Yastrebov, Viacheslav S. Pershenkov, et al. · European Conference on Radiation and Its Effects on Components and Systems · 3
“True” Dose Rate Effect of the ELDRS Conversion Model
2019 · V. S. Pershenkov, A. S. Bakerenkov, et al. · World Congress on Medical Physics and Biomedical Engineering, September 7 - 12, 2009, Munich, Germany · 2
Correlation between Temperature and Dose Rate Dependences of Input Bias Current Degradation in Bipolar Operational Amplifiers
2019 · A. Bakerenkov, V. Pershenkov, et al. · IEEE International Conference on Microelectronics (MIEL) · 2
Experimental Estimation of Input Offset Voltage Radiation Degradation Rate in Bipolar Operational Amplifiers
2019 · A. Bakerenkov, V. Pershenkov, et al. · IEEE International Conference on Microelectronics (MIEL) · 2
Temperature dependence of the radiation degradation at high total dose levels
2017 · Viacheslav S. Pershenkov, Alexander S. Bakerenkov, et al. · European Conference on Radiation and Its Effects on Components and Systems · 2
Effect of low-temperature irradiation on ELDRS in bipolar transistors
2016 · Alexander S. Bakerenkov, Viacheslav S. Pershenkov, et al. · European Conference on Radiation and Its Effects on Components and Systems · 2
Experimental Technique for Determination of ELDRS-Free Devices
2015 · Vasily S. Anashin, Viacheslav S. Pershenkov, et al. · European Conference on Radiation and Its Effects on Components and Systems · 2
Temperature Dependence of Surface Recombination Current in Bipolar Transistors
2023 · Alexander Bakerenkov, Vladislav Felitsyn, et al. · International Conference on Radiation Effects of Electronic Devices (ICREED) · 1
Works count: 60
Citation count: 123
H-index: 6
I10-index: 1
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