Author

J.C. Müller

Observed names: J C Muller, J-C Muller, J. C. Muller, J. C. Muller, J. J., J. C. Müller, J. Muller, J. Müller, J.-C. Muller, J.C Muller, J.C. Muller, J.C., Muller, J.c. Muller, JC Muller, Muller, J.-C., Muller, J.C., MÜLLER, Jean-Claude, Müller, J C

Observed institutions: Mohammed V University, Centre National de la Recherche Scientifique, Institut National de l'Énergie Solaire, Institut de Physique et Chimie des Matériaux de Strasbourg, Institut National de Physique Nucléaire et de Physique des Particules, Institut d'Électronique et des Systèmes, Université de Strasbourg

ORCID: 0009-0006-4422-450X

Observed ORCID: 0009-0006-4422-450X

OpenAlex ID: A5028544595

Silicon nanocrystals as light converter for solar cells

2004 · V. Švrček, A. Slaoui, et al. · Thin Solid Films · 192

Ex situ prepared Si nanocrystals embedded in silica glass: Formation and characterization

2004 · V. Švrček, A. Slaoui, et al. · Journal of Applied Physics · 74

Boron neutralization and hydrogen diffusion in silicon subjected to low-energy hydrogen implantation

1989 · T. Zundel, A. Mesli, et al. · Applied Physics A · 53

Phosphorus diffusion into silicon from a spin-on source using rapid thermal processing

1992 · B. Hartiti, A. Slaoui, et al. · Journal of Applied Physics · 52

Interface properties of a-Si:H/c-Si heterojunction solar cells from admittance spectroscopy

2006 · A.S. Gudovskikh, J.-P. Kleider, et al. · Thin Solid Films · 46

On the kinetics of solid phase regrowth and dopant activation during rapid thermal annealing of implantation amorphized silicon

1988 · W. O. Adekoya, M. Hage-Ali, et al. · Journal of Applied Physics · 43

Phosphorus diffusion from a spin-on doped glass (SOD) source during rapid thermal annealing

1998 · D. Mathiot, A. Lachiq, et al. · Materials Science in Semiconductor Processing · 40

Determination of deep levels in semi-insulating cadmium telluride by thermally stimulated current measurements

1975 · C. Scharager, J. C. Muller, et al. · physica status solidi (a) · 39

Unaggregated silicon nanocrystals obtained by ball milling

2005 · V. Švrček, J.-L. Rehspringer, et al. · Journal of Crystal Growth · 37

Field-enhanced neutralization of electrically active boron in hydrogen implanted Schottky diodes

1986 · T. Zundel, E. Courcelle, et al. · Applied Physics A · 37

Passivation of polycrystalline silicon solar cells by low-energy hydrogen ion implantation

1986 · J.C. Muller, Y. Ababou, et al. · Solar Cells · 36

Modeling and Analysis of the Silicon Epitaxial Growth with SiHCl3 in a Horizontal Rapid Thermal Chemical Vapor Deposition Reactor

1997 · D. Angermeier, R. Monna, et al. · Journal of The Electrochemical Society · 35

Large diffusion length enhancement in silicon by rapid thermal codiffusion of phosphorus and aluminum

1993 · B. Hartiti, A. Slaoui, et al. · Applied Physics Letters · 35

Laser-induced diffusion by irradiation of silicon dipped into an organic solution of the dopant

1981 · R. Stuck, E. Fogarassy, et al. · Applied Physics Letters · 33

Optimisation of amorphous and polymorphous thin silicon layers for the formation of the front-side of heterojunction solar cells on p-type crystalline silicon substrates

2006 · Y. Veschetti, J.-C. Muller, et al. · Thin Solid Films · 32

Study of trapping in mercuric iodide by thermally stimulated current measurements

1976 · R. Stuck, J. C. Muller, et al. · Journal of Applied Physics · 32

Strong improvement of diffusion length by phosphorus and aluminum gettering

1993 · M. Loghmarti, R. Stuck, et al. · Applied Physics Letters · 28

Large area, screen printed silicon solar cells with selective emitter made by laser overdoping and RTA spin-on glasses

2002 · U. Besu-Vetrella, L. Pirozzi, et al. · Conference record of the IEEE Photovoltaic Specialists Conference · 25

Thermally stimulated current measurements on silicon junctions produced by implantation of low energy boron ions

1974 · J.C. Muller, R. Stuck, et al. · Solid-State Electronics · 24

Origin of the defects observed after laser annealing of implanted silicon

1981 · A. Mesli, J. C. Muller, et al. · Applied Physics Letters · 21

Laser-beam annealing of heavily damaged implanted layers on silicon

1978 · J. C. Muller, A. Grob, et al. · Applied Physics Letters · 21

Passivation of laser induced defects in silicon by low energy hydrogen ion implantation

1986 · A. Slaoui, A. Barhdadi, et al. · Applied Physics A · 20

TSC in HgI2 crystals grown by solution and vapor phase techniques

1978 · J.C. Muller, A. Friant, et al. · Nuclear Instruments and Methods · 20

Rapid thermal annealing of thin doped and undoped spin-on glass films

1995 · L. Ventura, A. Slaoui, et al. · Materials Science and Engineering B · 19

Gettering of gold by rapid thermal processing

1989 · B. Hartiti, Vu-Thuong-Quat, et al. · Applied Physics Letters · 19

Works count: 223

Citation count: 1,712

H-index: 21

I10-index: 51