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Tadahiro Imada

Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics
2010 · M. Kanamura, T. Ohki, et al. · IEEE Electron Device Letters · 291
Organic light-emitting diodes driven by pentacene-based thin-film transistors
2003 · M. Kitamura, T. Imada, et al. · Applied Physics Letters · 113
MIT virtual source GaNFET‐high voltage (MVSG‐HV) model: A physics based compact model for HV‐GaN HEMTs
2014 · Ujwal Radhakrishna, Tadahiro Imada, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 67
Time-of-Flight Measurement of Lateral Carrier Mobility in Organic Thin Films
2004 · Masatoshi Kitamura, Tadahiro Imada, et al. · Japanese Journal of Applied Physics · 48
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Enhancement-mode GaN MIS-HEMTs for power supplies
2010 · T. Imada, M. Kanamura, et al. · International Power Electronics Conference (IPEC) · 46
Organic Transistor Circuits for Application to Organic Light-Emitting-Diode Displays
2003 · Masatoshi Kitamura, Tadahiro Imada, et al. · Japanese Journal of Applied Physics · 28
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Reliability analysis of enhancement-mode GaN MIS-HEMT with gate-recess structure for power supplies
2011 · T. Imada, K. Motoyoshi, et al. · IEEE International Integrated Reliability Workshop final report · 22
High current operation of enhancement-mode GaN MIS-HEMTs with triple cap structure using atomic layer deposited Al2O3 gate insulator
2009 · M. Kanamura, T. Ohki, et al. · Conference digest · 11
600 V GaN HEMT on 6-inch Si substrate using Au-free Si-LSI process for power applications
2013 · Toshihide Kikkawa, Tsutomu Hosoda, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 6
Correlation of on‐wafer 400 V dynamic behavior and trap characteristics of GaN‐HEMTs
2014 · T. Imada, D. Piedra, et al. · physica status solidi (a) · 5
Well proximity effect impact on fully isolated low Ron*Qg MOSFET performance
2014 · M. Shima, M. Katayama, et al. · International Conference on Solid State Devices and Materials (SSDM)
Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al2O3 Films
2012 · Shiro Ozaki, Toshihiro Ohki, et al. · 電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス
Copper Oxide Edge-Termination for GaN Schottky Barrier Diodes with Low Turn-on Voltage
2012 · Yuichi Minoura, Naoya Okamoto, et al. · MRS Proceedings
Measurement of Lateral Carrier Mobility in Organic Thin Films Using Time of Flight Method
2003 · Masatoshi Kitamura, Tadahiro Imada, et al. · International Conference on Solid State Devices and Materials (SSDM)
Organic thin-film transistors for driving organic light emitting diode
2002 · Masatoshi Kitamura, Tadahiro Imada, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 15
Citation count: 637
H-index: 8
I10-index: 8
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