Author

Nikolai N. Faleev

Observed names: Faleev, N. N., Faleev, N.N., Faleev, Nikolai, N N Faleev, N. Faleev, N. N. FALEEV, N. N. Faleev, N.N Faleev, N.N. Faleev, Nikolai N. Faleev, Nikolai Faleev, Nikolai N Faleev

Institution: Ioffe Institute

Observed institutions: Texas Tech University, Georgia Institute of Technology, Russian Academy of Sciences, St Petersburg University, Rigaku (United States), Academy of Sciences of the Soviet Union, Technische Universität Berlin, Arizona State University, Nagoya University, University of Delaware, Ioffe Institute

OpenAlex ID: A5029168761

Vibrational properties of AlN grown on (111)-oriented silicon

2001 · T. Prokofyeva, M. Seon, et al. · Physical review. B, Condensed matter · 267

Radiative states in type-II GaSb/GaAs quantum wells

1995 · N. N. Ledentsov, J. Böhrer, et al. · Physical review. B, Condensed matter · 219

High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

1999 · S. A. Nikishin, N. N. Faleev, et al. · Applied Physics Letters · 202

Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on α-Al2O3 and 6H–SiC substrates

2004 · I. Ahmad, M. Holtz, et al. · Journal of Applied Physics · 102

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Ordering effects in Raman spectra of coherently strained GaAs1−xNx

1997 · A. M. Mintairov, P. A. Blagnov, et al. · Physical review. B, Condensed matter · 87

Experimental and theoretical study of acceptor activation and transport properties in p-type AlxGa1−xN/GaN superlattices

2000 · I. D. Goepfert, E. F. Schubert, et al. · Journal of Applied Physics · 83

High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia

1999 · S. A. Nikishin, V. G. Antipov, et al. · Applied Physics Letters · 71

Design and Realization of Wide-Band-Gap ($\sim$2.67 eV) InGaN p-n Junction Solar Cell

2009 · B.R. Jampana, A.G. Melton, et al. · IEEE Electron Device Letters · 70

Selective growth of high quality GaN on Si(111) substrates

2000 · M. Seon, T. Prokofyeva, et al. · Applied Physics Letters · 61

Energy levels and exciton oscillator strength in submonolayer InAs-GaAs heterostructures

1995 · M. V. Belousov, N. N. Ledentsov, et al. · Physical review. B, Condensed matter · 61

Growth of single phase GaAs1−xNx with high nitrogen concentration by metal–organic molecular beam epitaxy

1997 · Y. Qiu, S. A. Nikishin, et al. · Applied Physics Letters · 57

Influence of Long-Range Lateral Ordering in Structures with Quantum Dots on the Spatial Distribution of Diffracted X-Ray Radiation

1999 · Nikolai Faleev, Konstantin Pavlov, et al. · Japanese Journal of Applied Physics · 40

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Interplay of kinetics and thermodynamics in molecular beam epitaxy of (Mg,Zn,Cd)(S,Se)

1998 · S. Ivanov, S. Sorokin, et al. · Journal of Crystal Growth · 37

Silicon Minority-carrier Lifetime Degradation During Molecular Beam Heteroepitaxial III-V Material Growth

2016 · Laura Ding, Chaomin Zhang, et al. · Energy Procedia · 36

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Growth of AlGaN on Si(111) by gas source molecular beam epitaxy

2000 · S. A. Nikishin, N. N. Faleev, et al. · Applied Physics Letters · 34

Applications of dynamical theory of X-ray diffraction by perfect crystals to reciprocal space mapping

2017 · Vasily I. Punegov, Konstantin M. Pavlov, et al. · Journal of Applied Crystallography · 33

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Depth dependence of defect density and stress in GaN grown on SiC

2005 · N. Faleev, H. Temkin, et al. · Journal of Applied Physics · 33

Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)

2013 · S. P. Bremner, K.-Y. Ban, et al. · Journal of Applied Physics · 32

Correlation of crystalline defects with photoluminescence of InGaN layers

2009 · Nikolai Faleev, Balakrishnam Jampana, et al. · Applied Physics Letters · 32

Fractal structure of ultradisperse-diamond clusters

1998 · M. V. Baidakova, A. Ya. Vul’, et al. · Physics of the Solid State · 32

Single phase ZnSnAs2 grown by molecular beam epitaxy

1998 · G. A. Seryogin, S. A. Nikishin, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 31

Low density of threading dislocations in AlN grown on sapphire

2007 · Nikolai Faleev, Hai Lu, et al. · Journal of Applied Physics · 28

The Influence of the Directed Displacement of Atomic Planes on the X-Ray Diffraction Rocking Curves

1990 · N. N. Faleev, L. I. Flaks, et al. · physica status solidi (a) · 28

Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature

1997 · N A Bert, V V Chaldyshev, et al. · Semiconductor Science and Technology · 26

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A new approach to wide-angle dynamical X-ray diffraction by deformed crystals

2006 · S. G. Podorov, N. N. Faleev, et al. · Journal of Applied Crystallography · 23

Works count: 172

Citation count: 2,458

H-index: 24

I10-index: 52