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Changjung Kim

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
2011 · Myoung-Jae Lee, Chang Bum Lee, et al. · Nature Materials · 2,252
Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors
2011 · Sungsik Lee, Khashayar Ghaffarzadeh, et al. · Applied Physics Letters · 348
Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules
2007 · Donghun Kang, Hyuck Lim, et al. · Applied Physics Letters · 345
Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors
2009 · Chang-Jung Kim, Sangwook Kim, et al. · Applied Physics Letters · 233
Control of threshold voltage in ZnO-based oxide thin film transistors
2008 · Jin-Seong Park, Jae Kyeong Jeong, et al. · Applied Physics Letters · 184
Modeling for bipolar resistive memory switching in transition-metal oxides
2010 · Ji Hyun Hur, Myoung-Jae Lee, et al. · Physical Review B · 178
Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays
2012 · Seung‐Eon Ahn, Ihun Song, et al. · Advanced Materials · 176
Persistent photoconductivity in Hf–In–Zn–O thin film transistors
2010 · Khashayar Ghaffarzadeh, Arokia Nathan, et al. · Applied Physics Letters · 156
Highly Stable Transparent Amorphous Oxide Semiconductor Thin‐Film Transistors Having Double‐Stacked Active Layers
2010 · Jae Chul Park, Sangwook Kim, et al. · Advanced Materials · 138
High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation
2008 · Jaechul Park, Sangwook Kim, et al. · Applied Physics Letters · 132
Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress
2010 · Khashayar Ghaffarzadeh, Arokia Nathan, et al. · Applied Physics Letters · 130
Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors
2008 · Jaechul Park, Ihun Song, et al. · Applied Physics Letters · 116
Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics
2008 · Kichan Jeon, Changjung Kim, et al. · Applied Physics Letters · 113
Source/Drain Series-Resistance Effects in Amorphous Gallium–Indium Zinc-Oxide Thin Film Transistors
2008 · Jaechul Park, Changjung Kim, et al. · IEEE Electron Device Letters · 101
Nanometer-Scale Oxide Thin Film Transistor with Potential for High-Density Image Sensor Applications
2010 · Sanghun Jeon, Sungho Park, et al. · ACS Applied Materials & Interfaces · 77
Low-Frequency Noise Performance of a Bilayer InZnO–InGaZnO Thin-Film Transistor for Analog Device Applications
2010 · Sanghun Jeon, Sun Il Kim, et al. · IEEE Electron Device Letters · 70
Double gate GaInZnO thin film transistors
2008 · Hyuck Lim, Huaxiang Yin, et al. · Applied Physics Letters · 68
Source/Drain Formation of Self-Aligned Top-Gate Amorphous GaInZnO Thin-Film Transistors by $\hbox{NH}_{3}$ Plasma Treatment
2009 · Sangwook Kim, Jaechul Park, et al. · IEEE Electron Device Letters · 64
Temperature dependent electron transport in amorphous oxide semiconductor thin film transistors
2011 · Sungsik Lee, Arokia Nathan, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 62
Modeling for multilevel switching in oxide-based bipolar resistive memory
2012 · Ji-Hyun Hur, Kyung Min Kim, et al. · Nanotechnology · 58
Verification of Interface State Properties of a-InGaZnO Thin-Film Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics by Low-Frequency Noise Measurements
2011 · Hyun-Sik Choi, Sanghun Jeon, et al. · IEEE Electron Device Letters · 57
High‐Performance Nanowire Oxide Photo‐Thin Film Transistor
2013 · Seung‐Eon Ahn, Sanghun Jeon, et al. · Advanced Materials · 52
Short channel device performance of amorphous InGaZnO thin film transistor
2011 · Sanghun Jeon, Anass Benayad, et al. · Applied Physics Letters · 49
Effect of Ga∕In ratio on the optical and electrical properties of GaInZnO thin films grown on SiO2∕Si substrates
2007 · Donghun Kang, Ihun Song, et al. · Applied Physics Letters · 46
The impact of active layer thickness on low-frequency noise characteristics in InZnO thin-film transistors with high mobility
2012 · Hyun-Sik Choi, Sanghun Jeon, et al. · Applied Physics Letters · 41
Works count: 44
Citation count: 5,527
H-index: 28
I10-index: 38
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