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Daniel J. Lichtenwalner

Observed names: D J. Lichtenwalner, D Lichtenwalner, D. J. LichtenWalner, D. J. Lichtenwalner, D. Lichtenwalner, D.J. Lichtenwalner, DJ Lichtenwalner, Dan Lichtenwalner, Daniel J Lichtenwalner, Daniel Jenner Lichtenwalner, Daniel Lichtenwalner, J. Lichtenwalner, Lichtenwalner, D. J., Lichtenwalner, Daniel, Lichtenwalner, Daniel Jenner
Observed institutions: North Carolina State University, Prairie View A&M University, Cree (China), Wolfspeed, Inc. (United States), MIT Lincoln Laboratory, Massachusetts Institute of Technology
ORCID: 0000-0002-6324-6118
Observed ORCID: 0000-0002-6324-6118
OpenAlex ID: A5030518772
Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV
2014 · J. W. Palmour, L. Cheng, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 307
Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning
2008 · P. D. Kirsch, P. Sivasubramani, et al. · Applied Physics Letters · 185
Polycrystalline La0.5Sr0.5CoO3/PbZr0.53Ti0.47O3/ La0.5Sr0.5CoO3 ferroelectric capacitors on platinized silicon with no polarization fatigue
1994 · R. Dat, D. J. Lichtenwalner, et al. · Applied Physics Letters · 181
Growth and characterization of cubic boron nitride thin films
1994 · D. J. Kester, K. S. Ailey, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 146
Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices
2017 · A. F. Witulski, R. Arslanbekov, et al. · IEEE Transactions on Nuclear Science · 115
Work function engineering using lanthanum oxide interfacial layers
2006 · H. N. Alshareef, M. Quevedo-Lopez, et al. · Applied Physics Letters · 110
Flexible thin film temperature and strain sensor array utilizing a novel sensing concept
2006 · Daniel J. Lichtenwalner, Aaron E. Hydrick, et al. · Sensors and Actuators A Physical · 100
New Generation 10kV SiC Power MOSFET and Diodes for Industrial Applications
2015 · Jeffrey B. Casady, Vipindas Pala, et al. · PCIM Europe: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM Europe) · 89
Investigation of the ablated flux characteristics during pulsed laser ablation deposition of multicomponent oxides
1993 · D. J. Lichtenwalner, O. Auciello, et al. · Journal of Applied Physics · 86
High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers
2014 · Daniel J. Lichtenwalner, Lin Cheng, et al. · Applied Physics Letters · 80
Comparison of Au and Au–Ni Alloys as Contact Materials for MEMS Switches
2009 · Zhenyin Yang, D.J. Lichtenwalner, et al. · Journal of Microelectromechanical Systems · 79
Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction
2005 · Daniel J. Lichtenwalner, Jesse S. Jur, et al. · Journal of Applied Physics · 77
Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC
2010 · Rahul Suri, Casey J. Kirkpatrick, et al. · Applied Physics Letters · 74
Reliability studies of SiC vertical power MOSFETs
2018 · Daniel J. Lichtenwalner, Brett Hull, et al. · IEEE International Reliability Physics Symposium proceedings · 71
SiC power device reliability
2016 · Donald A. Gajewski, Brett Hull, et al. · IEEE International Integrated Reliability Workshop final report · 69
Terrestrial Neutron-Induced Failures in Silicon Carbide Power MOSFETs and Diodes
2018 · A. Akturk, J. M. McGarrity, et al. · IEEE Transactions on Nuclear Science · 67
Dipole Moment Model Explaining nFET Vt Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics
2007 · P. Sivasubramani, T. S. Boscke, et al. · Symposium on VLSI Technology · 66
Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates
2010 · Rahul Suri, Daniel J. Lichtenwalner, et al. · Applied Physics Letters · 60
Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout
2018 · Daniel J. Lichtenwalner, Akin Akturk, et al. · Materials science forum · 59
Light emission from thermally oxidized silicon nanoparticles
1994 · D. Zhang, R. M. Kolbas, et al. · Applied Physics Letters · 47
Contact degradation in hot/cold operation of direct contact micro-switches
2010 · Z Yang, D Lichtenwalner, et al. · Journal of Micromechanics and Microengineering · 45
High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric
2009 · Daniel J. Lichtenwalner, Veena Misra, et al. · Applied Physics Letters · 45
Ultra high voltage MOS controlled 4H-SiC power switching devices
2015 · S Ryu, C Capell, et al. · Semiconductor Science and Technology · 44
A new test facility for efficient evaluation of MEMS contact materials
2007 · Z Yang, D Lichtenwalner, et al. · Journal of Micromechanics and Microengineering · 43
Thermally Stable N-Metal Gate MOSFETs Using La-Incorporated HfSiO Dielectric
2006 · H. Alshareef, H. Harris, et al. · Symposium on VLSI Technology · 42
Works count: 178
Citation count: 3,508
H-index: 31
I10-index: 72
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