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Author

Mike Pietsch

Observed names: M Pietsch, M. Pietsch, Pietsch, M., Pietsch, Mike
ORCID: 0000-0002-6082-7216
Observed ORCID: 0000-0002-6082-7216
OpenAlex ID: A5031239340
On the bulk β-Ga2O3 single crystals grown by the Czochralski method
2014 · Zbigniew Galazka, Klaus Irmscher, et al. · Journal of Crystal Growth · 679
Electrical properties of β -Ga2O3 single crystals grown by the Czochralski method
2011 · K. Irmscher, Z. Galazka, et al. · Journal of Applied Physics · 584
Czochralski growth and characterization of β‐Ga2O3 single crystals
2010 · Z. Galazka, R. Uecker, et al. · Crystal Research and Technology · 471
Scaling-Up of Bulk β-Ga 2 O 3 Single Crystals by the Czochralski Method
2016 · Zbigniew Galazka, Reinhard Uecker, et al. · ECS Journal of Solid State Science and Technology · 389
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Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions
2019 · Zbigniew Galazka, Klaus Irmscher, et al. · Journal of Crystal Growth · 125
On the nature and temperature dependence of the fundamental band gap of In2O3
2013 · K. Irmscher, M. Naumann, et al. · physica status solidi (a) · 122
Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals
2018 · Zbigniew Galazka, Steffen Ganschow, et al. · APL Materials · 121
Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al
2018 · Zbigniew Galazka, Steffen Ganschow, et al. · Journal of Crystal Growth · 109
MgGa2 O4 as a new wide bandgap transparent semiconducting oxide: growth and properties of bulk single crystals
2015 · Zbigniew Galazka, Detlef Klimm, et al. · physica status solidi (a) · 88
Two inch diameter, highly conducting bulk β -Ga2O3 single crystals grown by the Czochralski method
2022 · Zbigniew Galazka, Steffen Ganschow, et al. · Applied Physics Letters · 81
Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides
2020 · Zbigniew Galazka, Steffen Ganschow, et al. · Progress in Crystal Growth and Characterization of Materials · 79
Melt growth, characterization and properties of bulk In2O3 single crystals
2011 · Z. Galazka, R. Uecker, et al. · Journal of Crystal Growth · 77
Growth, characterization, and properties of bulk SnO2 single crystals
2013 · Zbigniew Galazka, Reinhard Uecker, et al. · physica status solidi (a) · 63
Effect of heat treatment on properties of melt-grown bulk In 2 O 3 single crystals
2012 · Zbigniew Galazka, Klaus Irmscher, et al. · CrystEngComm · 48
Bulk β-Ga2O3 single crystals doped with Ce, Ce+Si, Ce+Al, and Ce+Al+Si for detection of nuclear radiation
2019 · Zbigniew Galazka, Robert Schewski, et al. · Journal of Alloys and Compounds · 46
Melt growth and properties of bulk BaSnO 3 single crystals
2016 · Z Galazka, R Uecker, et al. · Journal of Physics Condensed Matter · 44
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Bulk single crystals and physical properties of β-(AlxGa1−x)2O3 (x = 0–0.35) grown by the Czochralski method
2023 · Zbigniew Galazka, Andreas Fiedler, et al. · Journal of Applied Physics · 41
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Identification of a tri-carbon defect and its relation to the ultraviolet absorption in aluminum nitride
2013 · K. Irmscher, C. Hartmann, et al. · Journal of Applied Physics · 39
Technology development of high purity germanium crystals for radiation detectors
2019 · N. Abrosimov, M. Czupalla, et al. · Journal of Crystal Growth · 35
Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β -Ga2O3 films for vertical device application
2023 · Ta-Shun Chou, Palvan Seyidov, et al. · Applied Physics Letters · 34
Bulk Single Crystals and Physical Properties of Rutile GeO2 for High‐Power Electronics and Deep‐Ultraviolet Optoelectronics
2024 · Zbigniew Galazka, Roberts Blukis, et al. · physica status solidi (b) · 33
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Experimental Hall electron mobility of bulk single crystals of transparent semiconducting oxides
2021 · Zbigniew Galazka, Klaus Irmscher, et al. · Journal of materials research/Pratt's guide to venture capital sources · 29
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Electrical properties of (11-22) Si:AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy
2020 · Humberto M. Foronda, Daniel A. Hunter, et al. · Applied Physics Letters · 23
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Development of Large‐Diameter and Very High Purity Ge Crystal Growth Technology for Devices
2023 · Rajappan Radhakrishnan Sumathi, Alexander Gybin, et al. · Crystal Research and Technology · 16
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Melt Growth and Physical Properties of Bulk LaInO3 Single Crystals
2021 · Zbigniew Galazka, Klaus Irmscher, et al. · physica status solidi (a) · 16
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Works count: 40
Citation count: 3,439
H-index: 23
I10-index: 27
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