Author

William S. Hobson

Observed names: HOBSON, WILLIAM SCOTT, Hobson, W.S., W S Hobson, W. Hobson, W. S. HOBSON, W. S. Hobson, W.S Hobson, W.S. Hobson

Observed institutions: Rutgers, The State University of New Jersey, AT&T (United States), Alcatel Lucent (Germany), University of Wisconsin–Madison, University of California, Los Angeles, DEVCOM Army Research Laboratory, Bell (Canada), Lehigh University, University of Florida, Sandia National Laboratories, Air Products (United States), Alcatel-Lucent (France), Hughes Aircraft (United States), Massachusetts Institute of Technology, Nokia (United States)

OpenAlex ID: A5032163821

Ga2O3 films for electronic and optoelectronic applications

1995 · M. Passlack, E. F. Schubert, et al. · Journal of Applied Physics · 438

Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectors

1992 · B. F. Levine, A. Zussman, et al. · Journal of Applied Physics · 186

High-power laser light source for near-field optics and its application to high-density optical data storage

1999 · Afshin Partovi, David Peale, et al. · Applied Physics Letters · 163

Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide

1997 · F. Ren, M. Hong, et al. · Solid-State Electronics · 152

Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs

1998 · F. Ren, J.M. Kuo, et al. · IEEE Electron Device Letters · 143

CCl 4 doping of GaN grown by metalorganic molecular beam epitaxy

1995 · C. R. Abernathy, J. D. MacKenzie, et al. · Applied Physics Letters · 128

Carbon doping of III–V compounds grown by MOMBE

1990 · C.R. Abernathy, S.J. Pearton, et al. · Journal of Crystal Growth · 112

Plasma etching of III–V semiconductors in CH4/H2/Ar electron cyclotron resonance discharges

1990 · C. Constantine, D. Johnson, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 112

Vertical-cavity surface-emitting lasers flip-chip bonded to gigabit-per-second CMOS circuits

1999 · A.V. Krishnamoorthy, L.M.F. Chirovsky, et al. · IEEE Photonics Technology Letters · 111

Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alane

1990 · C. R. Abernathy, A. S. Jordan, et al. · Applied Physics Letters · 101

GaAs/AlGaAs microdisk lasers

1994 · U. Mohideen, W. S. Hobson, et al. · Applied Physics Letters · 88

Room-temperature lasing action in In0.51Ga0.49P/In0.2Ga0.8As microcylinder laser diodes

1993 · A. F. J. Levi, R. E. Slusher, et al. · Applied Physics Letters · 75

High quality AlxGa1−xAs grown by organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor

1991 · W. S. Hobson, T. D. Harris, et al. · Applied Physics Letters · 73

Passivation of carbon-doped GaAs layers by hydrogen introduced by annealing and growth ambients

1993 · D. M. Kozuch, Michael Stavola, et al. · Journal of Applied Physics · 67

Nonlinear spectroscopy near half-gap in bulk and quantum well GaAs/AlGaAs waveguides

1992 · M. N. Islam, C. E. Soccolich, et al. · Journal of Applied Physics · 56

Inductively coupled plasma etching of III–V semiconductors in BCl3-based chemistries

1999 · T Maeda, J.W Lee, et al. · Applied Surface Science · 54

Large nonlinear phase shifts in low-loss AlxGa1−xAs waveguides near half-gap

1991 · S. T. Ho, C. E. Soccolich, et al. · Applied Physics Letters · 54

Implant isolation of GaAs-AlGaAs heterojunction bipolar transistor structures

1990 · F. Ren, S. J. Pearton, et al. · Applied Physics Letters · 52

Reactive ion etching of InP, InGaAs, InAlAs: Comparison of C2H6/H2 with CCl2F2/O2

1990 · S. J. Pearton, W. S. Hobson, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 51

Reactive ion etching of GaAs, AlGaAs, and GaSb in Cl2 and SiCl4

1990 · S. J. Pearton, U. K. Chakrabarti, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 49

Microscopic and macroscopic uniformity control in plasma etching

1990 · Konstantinos P. Giapis, Geoffrey R. Scheller, et al. · Applied Physics Letters · 48

High rate dry etching of InGaP in BCl3 plasma chemistries

1995 · F. Ren, W. S. Hobson, et al. · Applied Physics Letters · 47

Reactive ion etching induced damage in GaAs and AlGaAs using C2H6/H2/Ar or CCl2F2/O2 gas mixtures

1989 · S. J. Pearton, U. K. Chakrabarti, et al. · Journal of Applied Physics · 47

Photoluminescent properties of n-GaAs electrodes: Simultaneous determination of depletion widths and surface hole-capture velocities in photoelectrochemical cells

1986 · A. A. Burk, Phelps B. Johnson, et al. · Journal of Applied Physics · 46

Room-temperature 1.3 μm emission from InAs quantum dots grown by metal organic chemical vapor deposition

1999 · J. Bloch, J. Shah, et al. · Applied Physics Letters · 43

Works count: 347

Citation count: 5,070

H-index: 34

I10-index: 128